Analytical model of GaAs MESFET output conductance

Lam, Sang; Canfield, P.C.; McCamant, A.J.; Allstot, D.J.

doi:10.1109/gaas.1988.11058

Cited by 5 publications

(5 citation statements)

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“…The calculated percentage shift of the output conductance can reach 50%. The experimental results reported in [6] and [7] also show, at T = 325 K, that the output conductance starts to increase at a frequency of 10 Hz and reaches its saturated maximum value at 1 kHz. These results agree very well with our calculated results.…”

Section: A Frequency-dependent Output Conductuncementioning

confidence: 68%

“…2. In order to have a good comparison with the experimental results shown in [7] and [8], the temperature used is 325 K. Results calculated for other temperatures will be discussed later. The drain and the gate are biased with 3 and 0 V, respectively.…”

Section: A Frequency-dependent Output Conductuncementioning

confidence: 99%

“…8, as the temperature is increased from 275 to 325 K, the saturated frequency where the output conductance reaches its maximum shifts to higher values, and the shifts are about one order of magnitude for every 25 K increase in temperature. Lam et al [7] and Golio et al [8] have reported experimental results on the temperature-dependent behavior of the output conductance. The measured saturated frequency shifts with temperature agree well with our calculated results shown in Fig.…”

Section: Temperature Effectsmentioning

confidence: 99%

“…The temperature is 300 K and the dc drain voltage is 3 V. Because the magnitude of the output conductance is strongly dependent on the dc current level [7], [8], in order to make the comparison meaningful, the gate voltages of these devices were chosen so that they have the same dc drain current level. The drain current chosen is 0.42 A / cm and the corresponding gate voltages are -0.31, -0.2, -0.125, -0.06, and 0 V for the five devices.…”

Section: Eflects Of Impurity Concentration On Output Conductancementioning

confidence: 99%

“…The shift in output conductance varies widely depending on the bias condition and the device structure. At high frequencies, the output conductance saturates and the saturation frequency is very sensitive to the temperature of operation [4], [7], [SI. The change in output conductance has a great impact on device performance, and it is a serious problem for many analog and digital circuits.…”

Section: Introductionmentioning

confidence: 99%

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Numerical analysis of the frequency-dependent output conductance of GaAs MESFET's

Lee

1991

IEEE Trans. Electron Devices

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Absrrucl-The small-signal output conductance of GaAs MESFET's on semi-insulating substrate has been studied using two-dimensional numerical analysis. Frequency-, temperature-, and drain-bias-dependent behaviors of the output conductance are analyzed. It is confirmed that the bulk EL2 traps contribute significantly to the low-frequency-dependent behavior of the output conductance. Devices with different background trap concentration and acceptor concentration have been analyzed and compared. For devices with higher trap concentration and higher acceptor concentration, the output conductance is lower but exhibits stronger frequency dependence. NOMENCLATURE Electron capture coefficient of EL2 traps. Electron diffusion coefficient. Electron emission rate of EL2 traps. Energy difference between the conduction band Energy gap of GaAs. Frequency. DC drain current. AC drain current. Electron current density. Boltzmann constant. Degree in Kelvin. Free electron concentration. Shallow acceptor concentration. Effective density of state in the conduction band. Donor concentration. Effective density of state in the valence band. EL2 concentration. Ionized EL2 concentration. Electron charge. Time. Temperature. Volt. DC drain voltage. AC drain voltage. edge and the EL2 level.

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Section: A Frequency-dependent Output Conductuncementioning

confidence: 68%

Section: A Frequency-dependent Output Conductuncementioning

confidence: 99%

Section: Temperature Effectsmentioning

confidence: 99%

Section: Eflects Of Impurity Concentration On Output Conductancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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