Analytical model for threshold voltage and I–V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET

Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET

“…4, the computation results of the presented model are compared with the results calculated by using Eqs. (9,13) given in [14]. In these figures, noticeable discrepancies are shown in the range of shorter channel length.…”

“…An accurate estimation of the threshold voltage for a FET is crucial in the device optimization for circuit design. In most of analytical models [7][8][9][10][11][12][13][14], the threshold voltage of a short channel fully depleted (FD) cylindrical/surrounding gate MOSFET has been derived based upon the drain-induced barrier lowering (DIBL). The two-dimensional (2-D) Poisson's equation in the silicon core has been solved by decomposing it into a 1-D Poisson's equation and a 2-D Laplace's equation.…”

“…This approximation seems to be oversimplified and may be inconsistent with the suggested equi-potential boundary conditions. On the other hand, in several models [9,13], it has been assumed that the potential in the silicon core can be expressed as a parabolic function of the radial coordinate. This parabolic expression assumption, even though can avoid the complexity involved in [12,14], will be somewhat oversimplified since the potential in the silicon core has been derived by satisfying the 2-D Poisson's equation only at the silicon/oxide interface.…”

Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model

“…Since analytic solutions offer both advantages of greater physical insight and efficiency compared to their numerical counterparts, an explicit analytic solution is still highly desirable. References [23,24] employs the polynomial approximation of the potential profile. The accuracy of these models in principle relies on the degree of the polynomial used.…”

A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

“…In particular, attention is focused on multiple-gate MOSFETs because of their steep sub-threshold slope and low body-effect coefficient [1][2][3][4][5][6][7][8][9][10][11][12][13]. Among the various types of multiple-gate MOSFETs, SG MOSFETs exhibit the greatest reduction in SCE due to their excellent electrostatic-channel control [1][2][3][4][5][6][7][8][9][10][11]. Therefore, the results of research on SG MOSFETs should be highly helpful in permitting the realization of nanoscale device production in the future.…”