Analytical model for the strain-field and polarization-field hysteresis curves for ferroic materials

Sherrit, Stewart

doi:10.1117/12.715314

Cited by 2 publications

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“…8) The challenge is to simultaneously achieve a moderately high permittivity with high breakdown strength, while maintaining a low loss tangent under high electric fields. Figure 1 (after Sherrit 9) ) shows the energy storage density of ideal (a) linear dielectric, (b) ferroelectric, (c) relaxor, and (d) antiferroelectric materials; the shaded area of the polarizationelectric field hysteresis curve is the energy storage density. Ferroelectric materials generally have high permittivities (often on the order of 1000), but the hysteresis 10) contributes to higher energy losses.…”

Section: )3)mentioning

confidence: 99%

Amorphous-nanocrystalline lead titanate thin films for dielectric energy storage

Michael

Trolier-McKinstry

2014

J. Ceram. Soc. Japan

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Many high permittivity crystalline dielectric thin films have a low breakdown strength, which is unfavorable for dielectric energy storage devices. In contrast, many amorphous linear dielectrics have much lower permittivities but larger breakdown strengths. Here, composite thin films with nanocrystalline particles in an amorphous matrix were explored to increase the stored energy density of dielectrics. For this purpose, thin films of lead-rich lead titanate, Pb 1.1 TiO 3.1 , were fabricated via chemical solution deposition and heat-treated at temperatures¯400°C. Transmission electron microscopy indicated the presence of dense lead oxide nanocrystals in an amorphous lead titanate network. The films exhibit a relative permittivity of 32.6 and a low dielectric loss of 0.0008. The leakage current is approximately 10 ¹8 A/cm 2 , with a DC breakdown strength between 2 and 3 MV/cm. The 1 kHz breakdown strength exceeds 5 MV/cm. At an electric field of 5 MV/cm and a measurement frequency of 1 kHz, the maximum in energy storage density was ³28 J/cm 3 . These properties suggest that nanocomposite Pb 1.1 TiO 3.1 films may be a suitable candidate for integration into energy storage devices.

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confidence: 99%