Analytical model for design-optimization and performances of fabricated broadband (VIS-SWIR) photodetector for image sensor and optical communication applications

Dutta, Jaydeep; Oduor, Patrick; Dutta, Achyut K.; Dhar, Nibir K.

doi:10.1117/12.2311596

Cited by 4 publications

(2 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although this work is focused on APDs, the same metastructure is equally applicable to conventional p-i-n detectors. [7][8][9][10] Furthermore, compared to detectors with photonic structures etched into the active layer such as pillars and holes, 10,11 the present metastructure does not expose additional sidewall surfaces. Leakage current along these surfaces can thus be avoided.…”

Section: Introductionmentioning

confidence: 99%

High efficiency metastructure-based emitter and photodetector for imaging

Choi¹,

Oduor²,

Dhar³

et al. 2023

Image Sensing Technologies: Materials, Devices, Systems, and Applications X

View full text Add to dashboard Cite

In this work, we design an InGaAs avalanche photodiode (APD) with a higher photocurrent to dark current ratio than a conventional APD. The improvement is based on optical confinement in an optical resonant metastructure, which increases the optical intensity in the detector volume and thus its quantum efficiency. With optical confinement, the absorbing layer can be 20 times thinner than the conventional APD, reducing the intrinsic generation-recombination dark current by the same amount and still be able to produce 90.9% of the photocurrent. The photocurrent to intrinsic dark current ratio can thus be increased theoretically by 18.2 times in concomitant with a lower operating voltage. Higher photocurrent can also be obtained using a thicker absorber. Besides APDs, the optical resonator structure can also be applied to p-i-n photodiodes for similar improvement. To further increase the detection sensitivity, we design an efficient InGaAsP light emitting diode (LED) having a similar resonator geometry. The resonator geometry enables more collimated emission and increases the optical power theoretically by more than 36 times compared to a conventional LED. Integrating the meta- APD and LED together will yield a powerful SWIR transceiver for various low light, LIDAR, and 3-dimensional imaging applications.

show abstract

Section: Introductionmentioning

confidence: 99%

High efficiency metastructure-based emitter and photodetector for imaging

Choi¹,

Oduor²,

Dhar³

et al. 2023

Image Sensing Technologies: Materials, Devices, Systems, and Applications X

View full text Add to dashboard Cite

show abstract

“…First of all, InGaAs has high carrier mobility, which means that electrons and holes could move easily through the material resulting in faster operation speed suitable for highspeed applications such as optical communication systems. [21,23] Second, InGaAs has a wide wavelength range of operation due to its high absorption coefficient, covering the near-infrared to SWIR region, which is important for various applications, including spectroscopy and imaging in low light conditions. [24,25] Furthermore, InGaAs does not need a separate equipment such as a globebox because of its good thermal stability, and it is wellestablished and mature material attractive for integration with existing or new technologies such as Si-based electronics or 2Dbased optoelectronics due to its compatibility with conventional semiconductor fabrication process.…”

Section: Introductionmentioning

confidence: 99%

Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate

Kim,

Jeon,

et al. 2023

Adv Elect Materials

View full text Add to dashboard Cite

Photodetectors sensing the short‐wave infrared (SWIR) region have great potential due to their significant advantages in a variety of applications because SWIR light possesses both characteristics of visible light and infrared light. Among them, devices using photodetectors to mimic synaptic dynamics and functions have received a great deal of attention due to their capabilities to implement simplified neural systems. However, it is essential to develop synaptic devices that can operate fast with low energy consumption for more efficient implementation of neural systems. Here, a flexible InGaAs synaptic phototransistor with a fast operation speed of under 1 ms and low energy consumption in the atto joule level is developed to femto joule level which is superior to biological synapses (50 ms, 1–100 fJ). By using InGaAs which has high carrier mobility as a channel layer, weak light, and short optical pulse width, fast operation speed in the SWIR region with low energy consumption is obtained. Moreover, the devices demonstrate synaptic behaviors such as “excitatory post synaptic current”, “paired‐pulse facilitation”, “short term plasticity”, “long term plasticity”, and “learning‐experience behavior” as neuro‐synaptic applications. These results provide the possibilities for implementation of complex synaptic functions with fast speed and low power SWIR synaptic phototransistors.

show abstract