Analytical Methods of Equivalent Circuit Model and Transmission Matrix for a Plasmonic Switch with Sensing Capability in Near-Infrared Region

Nejat, Mohamad; Nozhat, Najmeh

doi:10.1007/s11468-020-01167-x

Cited by 3 publications

(3 citation statements)

References 41 publications

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“…The findings of some studies confirm that if the gap between the grating units is smaller than 20 nm in deep sub-wavelength grating structures, a strong coupling of the electromagnetic fields in the adjacent grating units is created [41,45]. This improves the absorption efficiency of the graphene layer as well as FWHM spectral width.…”

Section: Switch Characteristicsmentioning

confidence: 78%

“…For example, all-optical plasmonic switches based on MIM waveguide with a nonlinear resonator have been reported with the response time of 90 fs at the wavelength of 1.55 μm [44]. The response time of another plasmonic switch, consisting of an array of rectangular holes in a silver film, based on the enhanced optical transmission (EOT) phenomenon reaches 25 fs at the wavelength of 1.55 μm [45].…”

Section: Introductionmentioning

confidence: 99%

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Ultrafast active plasmonic switch based on the broadband high absorption of monolayer graphene with high modulation depth

Najafgholinezhad,

Pourmahyabadi

2024

Phys. Scr.

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Optical switches based on plasmonic nanostructures are of great interest due to their high speed performance. To improve the broadband switching performance, a plasmonic design based on metal-insulator-metal (MIM) structure and monolayer graphene (as an active layer) is proposed. In this scheme, the light absorption of the monolayer graphene and the optical bandwidth are increased due to magnetic dipole resonance and magnetic coupling effect. The numerical simulation results of the proposed structure reveal that high absorption is achieved at the wavelength of 1.55 ‌µm which is 67% and 93% for the monolayer graphene and the whole structure, respectively. This structure has a high absorption modulation depth which can be reached nearly 100% around the interband transition position in a wide wavelength range from 1 µm to 2.5 ‌‌‌‌‌µm. Also, regarding its short response time of 10 fs, this structure can be used as an ultrafast switch. In addition, the equivalent circuit model of the structure is derived from the transmission line model (TLM) that its results are in a very good agreement with the numerical simulation results.

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Section: Switch Characteristicsmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Ultrafast active plasmonic switch based on the broadband high absorption of monolayer graphene with high modulation depth

Najafgholinezhad,

Pourmahyabadi

2024

Phys. Scr.

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“…They can also be employed in plasmonic logic circuits [86] and integrated photonic circuits [87]. Other futuristic applications of such plasmonic switches include, but are not limited to, superresolution imaging [88], sensing [89], quantum computing [90], and neural networking [91].…”

Section: Introductionmentioning

confidence: 99%

Plasmonic switches based on VO₂ as the phase change material

Dalal,

Sharma

2024

Nanotechnology

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In this paper, a comprehensive review of the recent advancements in the design and development of plasmonic switches based on vanadium dioxide (VO2) is presented. Plasmonic switches are employed in applications such as integrated photonics, plasmonic logic circuits and computing networks for light routing and switching, and are based on the switching of the plasmonic properties under the effect of an external stimulus. In the last few decades, plasmonic switches have seen a significant growth because of their ultra-fast switching speed, wide spectral tunability, ultra-compact size, and low losses. In this review, first, the mechanism of the semiconductor to metal phase transition in VO2 is discussed and the reasons for employing VO2 over other phase change materials for plasmonic switching are described. Subsequently, an exhaustive review and comparison of the current state-of-the-art plasmonic switches based on VO2 proposed in the last decade is carried out. As the phase transition in VO2 can be activated by application of temperature, voltage or optical light pulses, this review paper has been categorized into thermally-activated, electrically-activated, and optically-activated plasmonic switches based on VO2 operating in the visible, near-infrared, infrared and terahertz frequency regions.

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Ultra-fast Two-bit All-Optical Analog to Digital Convertor Based on Surface Plasmons and Kerr-Type Nonlinear Cavity

2021

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Analytical Methods of Equivalent Circuit Model and Transmission Matrix for a Plasmonic Switch with Sensing Capability in Near-Infrared Region

Cited by 3 publications

References 41 publications

Ultrafast active plasmonic switch based on the broadband high absorption of monolayer graphene with high modulation depth

Ultrafast active plasmonic switch based on the broadband high absorption of monolayer graphene with high modulation depth

Plasmonic switches based on VO₂ as the phase change material

Ultra-fast Two-bit All-Optical Analog to Digital Convertor Based on Surface Plasmons and Kerr-Type Nonlinear Cavity

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Analytical Methods of Equivalent Circuit Model and Transmission Matrix for a Plasmonic Switch with Sensing Capability in Near-Infrared Region

Cited by 3 publications

References 41 publications

Ultrafast active plasmonic switch based on the broadband high absorption of monolayer graphene with high modulation depth

Ultrafast active plasmonic switch based on the broadband high absorption of monolayer graphene with high modulation depth

Plasmonic switches based on VO2 as the phase change material

Ultra-fast Two-bit All-Optical Analog to Digital Convertor Based on Surface Plasmons and Kerr-Type Nonlinear Cavity

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Product

Resources

About

Plasmonic switches based on VO₂ as the phase change material