Analytical Method for <i>RC</i> Snubber Optimization Design to Eliminate Switching Oscillations of SiC MOSFET

Yang, Xin; Xu, Mengwei; Li, Qiao; Wang, Ziru; He, Min

doi:10.1109/tpel.2021.3127516

Cited by 34 publications

(28 citation statements)

References 38 publications

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“…The d-q axis component of the negative sequence of the system can be described in ( 10)- (12), where the '-' sign represents the negative sequence. Therefore, the faulty converter pole's positive and negative sequence equivalent circuits can be represented in Fig.…”

Section: B Fault-tolerant Control Methods Verificationmentioning

confidence: 99%

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Fault-Tolerant Control and Isolation Method for NPC-Based AFEC Using Series-Connected 10kV SiC MOSFETs

2022

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Power Conditioning Systems (PCS) based on three-level converters with series-connected 10kV SiC MOSFETs have gained popularity for medium voltage applications with the increase in distributed energy sources. With the use of Silicon Carbide (SiC), a wide bandgap semiconductor composed of Silicon (Si) and Carbon (C), MOSFET increases in power electronics application due to higher switching frequency operations. A high switching frequency such as 10 kHz or more leads to a reduction in magnetic components' size and the PCS structure's size. Therefore, the smaller, modular, and lightweight PCS can be attained for micro-grid integration, EV charging, or high inertia-dominated power grid applications. The three-level NPC (3L-NPC) inverter using series-connected 10kV SiC MOSFET is a suitable topology for coupling the PCS with the medium-voltage utility grid. The converter's pole sustainability increases with the two series-connected switches, yet the switches are still sensitive and prone to malfunction under various environmental and mechanical causes. Therefore, a meticulous fault isolation and coordination design may be necessary for the front-end converter for possible switch faults in the converter poles. A well-designed fault-tolerant controller may sustain the converter operation under fault conditions while protecting the healthy parts of the converter. Besides, it minimizes the harmful effects of fault on the grid side and increases the system availability. This paper analyzes short and open circuit switch faults that might occur in the PCS. Accordingly, a fault-tolerant method and a fault isolation method are proposed. The proposed methods are verified with Saber™ and the Real-Time Digital Simulator simulation platforms.

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Section: B Fault-tolerant Control Methods Verificationmentioning

confidence: 99%

“…Each pole of 3L-NPC is composed of two seriesconnected 10 kV SiC MOSFETs and an RC snubber circuit to ensure the voltage balancing across the switch, as shown in Fig. 2 [11], [12]. The converter's pole sustainability increases with the two series-connected switches.…”

Section: Introductionmentioning

confidence: 99%

Fault-Tolerant Control and Isolation Method for NPC-Based AFEC Using Series-Connected 10kV SiC MOSFETs

2022

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“…The s-domain complex impedance is used to express the Z-parameter matrix of the two-port network in Figure 2c [15]. Here, the Z-parameter matrix of the linearized two-port network is given by…”

Section: Equivalent Circuit For Switching Oscillations Eiminationmentioning

confidence: 99%

“…When utilizing the s-domain complex impedance, each element of the Z-parameter matrix represents a 'transfer function' between the corresponding output and input at upper and lower MOSFET, respectively [15,25]. The terms of Z RLC (s) are…”

Section: Equivalent Circuit For Switching Oscillations Eiminationmentioning

confidence: 99%

“…It is easy and simple to implement, while a new low-frequency oscillation would be produced [11]. State-of-the-art RC snubber has attracted extensive attention for its high performance in suppressing oscillations, and its related parametric design methods have been reported continuously [12][13][14][15][16]. But it would apparently increase power losses [4,5].…”

Section: Introductionmentioning

confidence: 99%

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A novel inductively coupled RLC damping scheme for eliminating switching oscillations of SiC MOSFET

Li¹,

Yang

et al. 2023

IET Power Electronics

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Severe switching oscillations of SiC MOSFET seriously affect its efficient and reliable application. Herein, a novel inductively coupled RLC damping scheme is proposed to eliminate switching oscillations. Distinctive from existing RLC resonators, the setting that the resonant frequency of the secondary RLC damping is equal to that of the power loop is abandoned. Additionally, prior‐art analytical techniques of RLC resonators are based on seeking the peak impedance, which considerably undermines its suppression effect. First, a two‐port network is linearized from switching oscillations, where the characteristic equations are deduced. Then, parametric regions where the switching oscillations can be eliminated are determined by actively assigning poles via the root locus method. Consequently, the damping effect of the proposed scheme, as well as the resulted switching losses, shows its superiority over the state‐of‐the‐art snubbers. The proposed scheme is favourable in practical applications since it is less insensitive to parasitics enabling selection of snubber resistors with higher power ratings. It also avoids unusual temperature rise resulted by snubber losses due to oscillation suppression in the power loop as snubber losses are transferred to the secondary circuit. Theoretical analysis and experimental comparisons are conducted to verify the effectiveness of the proposed scheme.

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Design of RC Snubber for Reduction of Switch Ringing in SiC MOSFET-Based Boost Converter

Jagtap,

Pattnaik

2023

Advances in Sustainability Science and Technology

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Analytical Method for RC Snubber Optimization Design to Eliminate Switching Oscillations of SiC MOSFET

Cited by 34 publications

References 38 publications

Fault-Tolerant Control and Isolation Method for NPC-Based AFEC Using Series-Connected 10kV SiC MOSFETs

Fault-Tolerant Control and Isolation Method for NPC-Based AFEC Using Series-Connected 10kV SiC MOSFETs

A novel inductively coupled RLC damping scheme for eliminating switching oscillations of SiC MOSFET

Design of RC Snubber for Reduction of Switch Ringing in SiC MOSFET-Based Boost Converter

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