Analytical investigation of activation energy for Mg-doped p-AlGaN

Hasan, Md. Soyaeb; Mehedi, Ibrahim M.; Reza, Shahed; Kaysir, Rejvi

doi:10.1007/s11082-020-02462-x

Cited by 8 publications

(3 citation statements)

References 36 publications

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“…In AlGaN-based DUV-LEDs, magnesium (Mg) is one of the most desirable dopants in p-AlGaN. However, the activation energy of Mg increases from 160 meV to 510 meV as the Al fraction in AlGaN increases from 0% to 100% [57], [58], and the large increase in the activation energy leads to more difficult p-type doping than n-type doping of AlGaN. At present, a lot of research and attempts have been made for the p-type doping of AlGaN, and some progress has been achieved.…”

Section: B P-type Doping Of Alganmentioning

confidence: 99%

A Review of Recent Research Advances on AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Huang,

Li,

Xiang

2024

IEEE Access

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Due to environmental friendliness, small size, long lifetime, and adjustable light-emitting wavelength, AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) have great development potential in the fields of biochemical detection, sterilization and disinfection, and non-line-of-sight communication. After decades of research, AlGaN-based DUV-LEDs have significantly improved in the direction of luminous efficiency. However, the luminous efficiency of the present AlGaN-based DUV-LEDs is still at a low level compared with that of the fully commercialised nitride blue LEDs, making it difficult to meet the market demand. This paper first introduces the present development status of AlGaN-based DUV-LEDs and the reasons for the low luminous efficiency. Then from the preparation of AlGaN-based, AlGaN doping and the design of AlGaN-based DUV-LEDs structure to elaborate the research progress in recent years in the direction of improving the luminous efficiency of AlGaN-based DUV-LEDs. Finally discusses the challenges that the AlGaN-based DUV-LEDs are presently faced with, and their future opportunities for development. INDEX TERMS AlGaN-based DUV-LEDs;luminous efficiency;AlGaN-based;AlGaN doping;AlGaNbased DUV-LEDs structure I. INTRODUCTION

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Section: B P-type Doping Of Alganmentioning

confidence: 99%

A Review of Recent Research Advances on AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Huang,

Li,

Xiang

2024

IEEE Access

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“…One thing must be noted that for 23% AlGaN, the activation energy for acceptors E 250 meV A = [47]. Therefore, the activation energy calculated from the integrated PL versus T plot (E 192 meV A1 =…”

Section: Photoluminescence (Pl) Spectroscopymentioning

confidence: 99%

Growth of uniform Mg-doped p-AlGaN nanowires using plasma-assisted molecular beam epitaxy technique for UV-A emitters

Sarkar¹,

Bhunia²,

Jana³

et al. 2022

Nanotechnology

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In this manuscript, we have shown the growth and extensive structural and optical characteristic of the uniformly Mgdoped Al0.23Ga0.77N (UV-A region, λ~323 nm) nanowire. The Kelvin Probe Force Microscopy (KPFM) was employed to determine the profile of holes in p-type AlGaN nanowires by measuring the work function changes induced by Mg incorporation. The influence of surface band bending on doping concentration has thoroughly been discussed. Our experiment confirms the homogeneous incorporation of Mg throughout the nanowire without any top surface Mg segregation. In this work, we have also demonstrated a comprehensive analysis of acceptor states induced thermal quenching behaviour in the optical transition of Mg-doped AlGaN nanowire. We propose a phenomenological model, based on the rate equation which confirms that achieving higher 'hole' (p-doping) concentration in AlGaN nanowire (>1017cm-3) is more conducive than the planar counterpart if the growth of NWs is carried out at optimized process conditions. This rate equation-based model has also demonstrated the influence of sidewall surface passivation in those AlGaN nanowires.

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“…The acceptor ionization energy of AlGaN is exceptionally high, and it increases with increasing Al content, leading to limited hole injection from the p-AlGaN cladding layer. Higher doping in the p-type cladding layer can alleviate the issue, however, the presence of an absorption tail in this heavily doped cladding layer leads to increased optical loss, and threshold current [11,12]. Additionally, the high effective masses of holes contribute to the high resistivity of p-AlGaN layers [13].…”

Section: Introductionmentioning

confidence: 99%

Low voltage drop AlGaN UV-A laser structures with transparent tunnel junctions and optimized quantum wells

Ghosh,

Dominic Merwin Xavier,

Hasan

et al. 2023

J. Phys. D: Appl. Phys.

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This paper presents the design, material growth and fabrication of AlGaN laser structures grown by plasma-assisted molecular beam epitaxy. Considering hole transport to be the major challenge, our ultraviolet-A diode laser structures have a compositionally graded transparent tunnel junction, resulting in superior hole injection and a low contact resistance. By optimizing active region thickness, a five-fold improvement in photoluminescence intensity is obtained compared to that of our own non-optimized test structures. The electrical and optical characteristics of processed devices demonstrate only spontaneous emission with a peak wavelength at 354 nm. The devices operate up to a continuous-wave current density of 11.1 kA/cm2 at room temperature, which is the highest reported for laser structures grown on AlGaN templates. Additionally, they exhibit a record-low voltage drop of 8.5 V to achieve this current density.

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Analytical investigation of activation energy for Mg-doped p-AlGaN

Cited by 8 publications

References 36 publications

A Review of Recent Research Advances on AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

A Review of Recent Research Advances on AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Growth of uniform Mg-doped p-AlGaN nanowires using plasma-assisted molecular beam epitaxy technique for UV-A emitters

Low voltage drop AlGaN UV-A laser structures with transparent tunnel junctions and optimized quantum wells

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