Analytical Investigation of a Split Double Gate Graded Channel Field Effect Transistor for Biosensing Applications

Singh, Khuraijam Nelson; Dutta, Pradip

doi:10.1007/s12633-022-01774-9

Cited by 4 publications

(3 citation statements)

References 36 publications

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“…57 Conversely, doublestranded DNA (dsDNA) is simulated with a dielectric constant K = 8 and a surface charge density Q f = 5 × 10 11 C cm −2 . [58][59][60] For avian influenza antigen (AIa) detection, Silica binding protein (SBP) and AIa were combined, and the simulation employed a surface charge density of 2 × 10 11 C cm −2 and a dielectric constant of 2. 61 Subsequently, the immobilization of avian influenza antibody (AI-ab) within the open cavity was modeled using specific values: a dielectric constant of 3 and a surface charge density of −6 × 10 11 C cm −2 .…”

Section: Resultsmentioning

confidence: 99%

“…61 Subsequently, the immobilization of avian influenza antibody (AI-ab) within the open cavity was modeled using specific values: a dielectric constant of 3 and a surface charge density of −6 × 10 11 C cm −2 . 60,61 When DNA and the Avian Influenza antibody are introduced into the open cavity, the surface potential along the channel varies with the concentration and charge density of biomolecules due to change in effective gate oxide capacitance, 52,62 as depicted in Fig. 3.…”

Section: Resultsmentioning

confidence: 99%

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Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

Yadav,

Das,

Rewari

2024

ECS J. Solid State Sci. Technol.

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This paper introduces a novel device called the gate all around engineered gallium nitride field effect transistor (GAAE-GANFET), designed specifically for label-free biosensing applications. This innovative gate-all-around engineering in GANFET integrates various device engineering techniques, such as channel engineering, gate engineering, and oxide engineering, to enhance biosensing performance. The channel engineering techniques refer to the use of a gallium nitride channel with a step-graded doping profile, divided into three distinct regions. In contrast, the gate engineering technique refers to the cylindrical split-gate-underlap architecture. The oxide engineering technique involves stacking Al2O3 and HfO2. Moreover, this biosensor incorporates two-sided gate underlap cavities that facilitate the immobilization of biomolecules. These open cavities not only provide structural stability but also simplify the fabrication process to a significant extent. The viability of this biosensor as a label-free biosensor has been evaluated using an antigen and an antibody from the Avian Influenza virus and DNA as the target biomolecules. The proposed analytical model and TCAD simulation results are in excellent agreement, demonstrating the reliability of the proposed device. Additionally, the biosensor's sensitivity, which depends on cavity length, doping concentration, gate metal work function, and temperature variation, has been thoroughly explored.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

Yadav,

Das,

Rewari

2024

ECS J. Solid State Sci. Technol.

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“…𝐿 and 𝐿 optimum values are set in such a way so that maximum alteration in threshold voltage (∆𝑉 ) will be achieved while varying k values of bio-molecules from 1.57 up to 12.00. [19,20]. Table 1 illuminates the versatile design factors of the Trench like structured Dual-Gate Junctionless Field Effect Transistor (TG@DMJLFET) and Table 2 depicts…”

Section: Device Architecture With Simulation Arrangementmentioning

confidence: 99%

Trench Dual Gate Junctionless Field Effect Transistor

DHAR,

Poddar,

Roy

2024

JICS

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Diversified biomolecules sensing is turning out to be the most promising area of research due to ever decreasing healthy lifestyle. Field effect transistorized biosensing approach puts its signature as label free, portable and also very careful pathway. In this present work a trench structured dielectric modulated double gate junction-less field effect transistor (TG-DMJLFET) is urbanized using SILVACO ATLAS simulator for label free detection of biomolecules. The developed structure has two vertically positioned gates in distinct trenches. For immobilizing biomolecules, two cavities are formed in the gate oxide region for dielectric modulation. The dielectric constant (k) has been varied over a wide range of 1.54 (Uricase) to 12(Gelatin) signifying the sensing of diverse charged biomolecules. The sensitivity is evaluated in terms of threshold voltage shift and transconductance . The in-depth electrostatic analysis is illustrated in terms of central potential ,energy band diagram ,drive current and also by the depiction of the electric field .In case of charged biomolecules, the shift in threshold voltage is obtained as 350 mV for change in the di-electric constant (k) ranging from 1.54 to 12. The transconductance alteration is observed as 1.94×10-5 when the k is changed from 3.46 to 12 .The device has showed excellent performance in biomolecules sensing.

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Analysis of Channel Grading on Triple Material Double Gate Stack Oxide SON MOSFET

Kumar

Singh

2023

Lecture Notes in Electrical Engineering

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Analytical Investigation of a Split Double Gate Graded Channel Field Effect Transistor for Biosensing Applications

Cited by 4 publications

References 36 publications

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

Trench Dual Gate Junctionless Field Effect Transistor

Analysis of Channel Grading on Triple Material Double Gate Stack Oxide SON MOSFET

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