Analytic view on N body interaction in electrostatic quantum gates and decoherence effects in tight-binding model

Pomorski, Krzysztof

doi:10.1142/s021974992141001x

Cited by 5 publications

(3 citation statements)

References 23 publications

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“…The origin of tight-binding model dissipation [26], [27] was identified in the framework of Schrödinger formalism, since real value eigenergies of 2 quantum dot system (E1, E2) can be replaced with (E1r + iE1i, E2r + iE2i), where (E1i,E2i) are dissipative terms and (E1r,E2r) are real-valued non-dissipative terms (originally given by Schrödinger equation). The mathematical structure of dissipative tight-binding model in static case with constant electric and magnetic field was given by 2.21 and in case of Rabi oscillation was given by 2.49.…”

Section: Discussionmentioning

confidence: 99%

Electrostatically interacting Wannier qubits in curved space

Pomorski¹

2021

Preprint

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Derivation of tight-binding model from Schrödinger formalism for various topologies of position-based semiconductor qubits is presented in this work in case of static and time-dependent electric fields. Simplistic tight-binding model allows for description of single-electron devices at large integration scale. The case of two electrostatically Wannier qubits (that are also known as position based qubits) in Schrödinger model is presented with omission spin degrees of freedom. The concept of programmable quantum matter can be implemented in the chain of coupled semiconductor quantum dots. Indeed highly integrated and developed cryogenic CMOS nanostructures can be mapped to coupled quantum dots, whose connectivity can be controlled by voltage applied across transistor gates as well as external magnetic field. Using anti-correlation principle arising from Coulomb repulsion interaction between electrons one can implement classical and quantum inverter (Classical/Quantum Swap gate) and many other logical gates. This anti-correlation will be weaken due to the fact of quantumness of physical process is bringing coexistence of correlation and anti-correlation at the same time. One of the central results presented in this work relies on the emergence of dissipation processes during smooth bending of semiconductor nanowires both in the case of classical and quantum picture. Presented results give the base for physical description of electrostatic Q-Swap gate of any topology using open loop nanowires, whose functionality can be programmed. We observe strong localization of wavepacket due to nanowire bending. Therefore it is not always necessary to built barrier between two nanowires to obtain two quantum dot system. On another hand the obtained results can be mapped to problem of electron in curved space, so they can be expressed by programmable position-dependent metric embedded in Schrödinger equation. Indeed semiconductor quantum dot system is capable of mimicking the curved space what provides bridge between fundamental and applied science present in implementation of single-electron devices.

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Section: Discussionmentioning

confidence: 99%

Electrostatically interacting Wannier qubits in curved space

Pomorski¹

2021

Preprint

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“…One also expects that in the situation of 2 electrostatically qubits the passage of external charged partcles is changing the quantum entanglement between qubits and anticorrelation function characterising two interacting qubits. Part of this work was presented in [3] and in [6,14,15]. The results can be extended quite straightforward to the more complicated structures by the mathematical framework given in [6], [7] and [8][9][10][11][12][13][14][15].…”

Section: Discussionmentioning

confidence: 99%

“…Part of this work was presented in [3] and in [6,14,15]. The results can be extended quite straightforward to the more complicated structures by the mathematical framework given in [6], [7] and [8][9][10][11][12][13][14][15]. Particular attention shall be paid to the structures depicted in Fig.…”

Section: Discussionmentioning

confidence: 99%