Analytic dispersion relations near the Γ point in strained zinc-blende crystals

Bahder, Thomas B.

doi:10.1103/physrevb.45.1629

Cited by 50 publications

(45 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For a general description see, e.g. [46][47][48][49][50][51]. The EFA model was originally developed by Luttinger and Kohn to analyse hole states around defects in semiconductors [52].…”

Section: Conventional Multiband Envelope Wave Function Theorymentioning

confidence: 99%

“…A common choice is to include eight Bloch functions in the basis set [50,51]. The EFA model is consequently accurate for calculations of confined states close to bandedges.…”

Section: Conventional Multiband Envelope Wave Function Theorymentioning

confidence: 99%

“…The parameter B has been included in (3.4a)-(3.4h) for the sake of completeness and future reference, although in our simulations we have adopted the common choice of neglecting the inversion symmetry-breaking by setting B = 0 [8,33,51,59,64]. Furthermore, a c , a v , b v and d v are the deformation potentials related to the strain.…”

Section: Conventional Multiband Envelope Wave Function Theorymentioning

confidence: 99%

See 2 more Smart Citations

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

Boxberg

Tulkki

2007

Rep. Prog. Phys.

View full text Add to dashboard Cite

Strain-induced quantum dots (SIQD) confine electrons and holes to a lateral potential minimum within a near-surface quantum well (QW). The potential minimum is located in the QW below a nanometre-sized stressor crystal grown on top of the QW. SIQD exhibit well-resolved and prominently atomic-like optical spectra, making them ideal for experimental and theoretical studies of mesoscopic phenomena in semiconductor nanocrystals.In this report we review the theory of strain-induced confinement, electronic structure, photonics and carrier relaxation dynamics in SIQD. The theoretical results are compared with available experimental data. Electronic structure calculations are mainly performed using the multiband envelope function approach. Many-body effects are discussed using a direct diagonalization method, albeit, for the sake of computational feasibility, within a two-band model.The QD carrier dynamics are discussed in terms of a master equation model, which accounts for the details of the electronic structure as well as the leading photon, phonon and Coulomb interaction processes. We also discuss the quantum confined Stark effect, the Zeeman splitting and the formation of Landau levels in external fields. Finally, we review a recent theory of the cooling of radiative QD excitons by THz radiation. In particular we discuss the resonance charge transfer of holes between piezoelectric trap states and the deformation potential minima. The agreement between the theory and experiment is fair throughout, but calls for further investigations.

show abstract

“…For a general description see, e.g. [46][47][48][49][50][51]. The EFA model was originally developed by Luttinger and Kohn to analyse hole states around defects in semiconductors [52].…”

Section: Conventional Multiband Envelope Wave Function Theorymentioning

confidence: 99%

“…A common choice is to include eight Bloch functions in the basis set [50,51]. The EFA model is consequently accurate for calculations of confined states close to bandedges.…”

Section: Conventional Multiband Envelope Wave Function Theorymentioning

confidence: 99%

Section: Conventional Multiband Envelope Wave Function Theorymentioning

confidence: 99%

See 1 more Smart Citation

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

Boxberg

Tulkki

2007

Rep. Prog. Phys.

View full text Add to dashboard Cite

show abstract

“…Since the Luttinger parameters vary spatially, we used the prescription γ i ∂ 2 x → ∂ x γ i ∂ x . The strain dependent coupling is given by [7] …”

Section: Hamiltonianmentioning

confidence: 99%

Electronic structure of strainedInP/Ga0.51In
Pryor
¹
,
Pistol
²
,
Samuelson
³

1997
Phys. Rev. B
212
4
130
0
View full text Add to dashboard Cite

We calculate the electronic structure of nm scale InP islands embedded in Ga0.51In0.49P. The calculations are done in the envelope approximation and include the effects of strain, piezoelectric polarization, and mixing among 6 valence bands. The electrons are confined within the entire island, while the holes are confined to strain induced pockets. One pocket forms a ring at the bottom of the island near the substrate interface, while the other is above the island in the GaInP. The two sets of hole states are decoupled. Polarization dependent dipole matrix elements are calculated for both types of hole states.

show abstract

“…24,25 The parameters of the Hamiltonian 23 are obtained from Ref. 26 The energies and wave functions are calculated by replacing derivatives with finite differences on the same cubic grid as used for the strain calculation.…”

Section: Calculation Methods For Dopants In T2slmentioning

confidence: 99%

Defect states in type-II strained-layer superlattices

Flatté

Pryor

2010

SPIE Proceedings

View full text Add to dashboard Cite

The electronic structure of isoelectronic defects, donors and acceptors is calculated within a full superlattice picture for InAs/GaSb and InAs/GaInSb superlattices. The wavefunctions associated with these states extend beyond a typical layer width for the superlattices. Thus band alignments between the layers as well as interface properties are predicted to dramatically change these defects' binding energy as well as their influence on superlattice electronic, optical and transport properties. Defect properties are also substantially modified by their location within a superlattice layer.

show abstract

Analytic dispersion relations near the Γ point in strained zinc-blende crystals

Cited by 50 publications

References 10 publications

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

Electronic structure of strainedInP/Ga0.51In
Pryor
¹
,
Pistol
²
,
Samuelson
³

1997
Phys. Rev. B
212
4
130
0
View full text Add to dashboard Cite

Defect states in type-II strained-layer superlattices

Contact Info

Product

Resources

About

Analytic dispersion relations near the Γ point in strained zinc-blende crystals

Cited by 50 publications

References 10 publications

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

Electronic structure of strainedInP/Ga0.51InPryor1, Pistol2, Samuelson3 1997Phys. Rev. B21241300View full textAdd to dashboardCite

Defect states in type-II strained-layer superlattices

Contact Info

Product

Resources

About

Electronic structure of strainedInP/Ga0.51In
Pryor
¹
,
Pistol
²
,
Samuelson
³

1997
Phys. Rev. B
212
4
130
0
View full text Add to dashboard Cite