Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion

Pop, Eric; Dutton, R.W.; Goodson, Kenneth E.

doi:10.1063/1.1788838

Cited by 168 publications

(188 citation statements)

References 29 publications

Supporting

Mentioning

181

Contrasting

Unclassified

Order By: Relevance

“…[59][60][61][62][63] In the present work special attention is given to the importance of the transverse phonons and to the role of the dilatation and shear potential constants, Ξ d and Ξ u respectively, which parameterize the electron-phonon coupling strengths.…”

Section: -15mentioning

confidence: 99%

See 1 more Smart Citation

Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots

2011

View full text Add to dashboard Cite

We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum dots, in in-plane and perpendicular magnetic fields. The deformation potential of acoustic phonons is taken into account for both transverse and longitudinal polarizations and their contributions to the total relaxation rate are discussed with respect to the dilatation and shear potential constants. We find that in single dots the spin relaxation rate scales approximately with the seventh power of the magnetic field, in line with a recent experiment. In double dots the relaxation rate is much more sensitive to the dot spectrum structure, as it is often dominated by a spin hot spot. The anisotropy of the spin-orbit interactions gives rise to easy passages, special directions of the magnetic field for which the relaxation is strongly suppressed. Quantitatively, the spin relaxation rates in Si are typically 2 orders of magnitude smaller than in GaAs due to the absence of the piezoelectric phonon potential and generally weaker spinorbit interactions.

show abstract

Section: -15mentioning

confidence: 99%

“…In a (001)-grown quantum well, the electron-phonon coupling for intravalley scattering is the deformation potential of transverse acoustic (TA) and longitudinal acoustic (LA) phonons given by [59][60][61][62][63]79 …”

Section: 78mentioning

confidence: 99%

Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots

2011

View full text Add to dashboard Cite

show abstract

“…The energy relaxation is enabled by phonons, whereas spin-orbit interactions allow for a spin flip. In a (001)-grown quantum well of silicon, the electron-phonon coupling for intravalley scattering is the deformation potential of transverse acoustic (TA) and longitudinal acoustic (LA) phonons, given by 60,64,[81][82][83][84] …”

Section: Modelmentioning

confidence: 99%

“…44,89 Other material parameters read c l = 9150 m/s (for LA phonons), c t = 5000 m/s (for TA phonons), ρ = 2330 kg/m 3 , and ε = 11.9ε 0 . 90 The choice of deformation potential constants is not unique, 83,84,91 and we use d = 5 eV and u = 9 eV according to Ref. 90.…”

Section: Modelmentioning

confidence: 99%

Theory of spin relaxation in two-electron laterally coupled Si/SiGe quantum dots

2012

View full text Add to dashboard Cite

Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of 29 Si (natural or purified abundance), is investigated for experimentally relevant parameters, the interdot coupling, the magnetic field magnitude and orientation, and the detuning. We calculate relaxation rates for zero and finite temperatures (100 mK), concluding that our findings for zero temperature remain qualitatively valid also for 100 mK. We confirm the same anisotropic switch of the axis of prolonged spin lifetime with varying detuning as recently predicted in GaAs. Conditions for possibly hyperfine-dominated relaxation are much more stringent in Si than in GaAs. For experimentally relevant regimes, the spin-orbit coupling, although weak, is the dominant contribution, yielding anisotropic relaxation rates of at least two orders of magnitude lower than in GaAs.

show abstract

“…We use an isotropic quadratic function, as suggested in Ref. [33], to approximate the dispersion relation as…”

Section: Dispersion Relation and Specific Heatmentioning

confidence: 99%

A moment model for phonon transport at room temperature

Mohammadzadeh

2016

Continuum Mech. Thermodyn.

View full text Add to dashboard Cite

Heat transfer in solids is modeled by deriving the macroscopic equations for phonon transport from the phonon-Boltzmann equation. In these equations, the Callaway model with frequency dependent relaxation time is considered to describe the Resistive and Normal processes in the phonon interactions. Also, the Brillouin zone is considered to be a sphere, its diameter depends on the temperature of the system. A simple model to describe phonon interaction with crystal boundary is employed to obtain macroscopic boundary conditions, where the reflection kernel is the superposition of diffusive reflection, specular reflection and isotropic scattering. Macroscopic moments are defined using a polynomial of the frequency and wave vector of phonons. As an example, a system of moment equations, consisting of 3 directional and 7 frequency moments, i.e., 63 moments in total, is used to study one-dimensional heat transfer, as well as Poiseuille flow of phonons. Our results show the importance of frequency dependency in relaxation times and macroscopic moments to predict rarefaction effects. Good agreement with data reported in the literature is obtained. * alirezam@uvic.ca 2

show abstract

Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion

Cited by 168 publications

References 29 publications

Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots

Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots

Theory of spin relaxation in two-electron laterally coupled Si/SiGe quantum dots

A moment model for phonon transport at room temperature

Contact Info

Product

Resources

About