Analysis using a two-layer model of the transport properties of InGaN epilayers grown on GaN template substrate

Yusof, A. P. M.; Hamady, Sidi Ould Saad; Chevallier, Christyves; Fressengeas, Nicolas; Hassan, Z.; Ng, Sha Shiong; Ahmad, M.A.; Lim, Way Foong; Seliman, Muhd Azi Che

doi:10.1016/j.mssp.2022.106614

Cited by 3 publications

(2 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…GaN also possesses high electron mobility, which refers to the rapid flow of electrons through a substance when exposed to an electric field. Additionally, it exhibits exceptional thermal conductivity and reduced on-resistance compared to conventional silicon-based devices [51,52].…”

Section: Gallium Nitridementioning

confidence: 99%

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

Jafar,

Jiang,

et al. 2023

Crystals

View full text Add to dashboard Cite

The optimization of the synthesis of III-V compounds is a crucial subject in enhancing the external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other devices. There are several challenges in growing high-quality InGaN materials, including the lattice mismatch between GaN and InGaN causing stress and piezoelectric polarization, the relatively high vapor pressure of InN compared to GaN, and the low level of incorporation of indium in InGaN materials. Furthermore, carrier delocalization, Shockley–Read–Hall recombination, auger recombination, and electron leakage in InGaN light-emitting diodes (LEDs) are the main contributors to efficiency droop. The synthesis of high-quality III-V compounds can be achieved by optimizing growth parameters such as temperature, V/III ratios, growth rate, and pressure. By reducing the ammonia flow from 200 sccm to 50 sccm, increasing the growth rate from 0.1 to 1 m/h, and lowering the growth pressure from 250 to 150 Torr, the external quantum efficiency of III-V compounds can be improved at growth temperatures ranging from 800 °C to 500 °C. It is crucial to optimize the growth conditions to achieve high-quality materials. In addition, novel approaches such as adopting a microrod crystal structure, utilizing the piezo-phototronic effect, and depositing AlN/Al2O3 on top of the P-GaN and the electron-blocking layer can also contribute to improving the external quantum efficiency. The deposition of a multifunctional ultrathin layers of AlN/Al2O3 on top of the P-GaN can enhance the peak external quantum efficiency of InGaN blue LEDs by 29%, while the piezo-phototronic effect induced by a tensile strain of 2.04% results in a 183% increase in the relative electroluminescence intensity of the LEDs. This paper also discusses conventional and inverted p-i-n junction structures of LEDs.

show abstract

Section: Gallium Nitridementioning

confidence: 99%

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

Jafar,

Jiang,

et al. 2023

Crystals

View full text Add to dashboard Cite

show abstract

“…To date, A.S. Yusof et al explained the transport properties of InGaN epilayers grown analysis using a two-layer model. Growth conditions were improved using this approach to yield InGaN monocrystalline single phase with an indium content of up to 11% (Yusof et al, 2022).…”

Section: Introductionmentioning

confidence: 99%

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

Hamzah

Sahar²,

Tan³

et al. 2022

Self Cite

View full text Add to dashboard Cite

Purpose This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) heterostructures. Design/methodology/approach The InGaN/GaN heterostructures were grown on flat sapphire substrates using a metal-organic chemical vapour deposition reactor with a trimethylindium flow rate of 368 sccm. The indium composition of the InGaN epilayers was controlled by applying different substrate temperatures. The surface morphology and topography were observed using field emission scanning electron microscope (F.E.I. Nova NanoSEM 450) and atomic force microscopy (Bruker Dimension Edge) with a scanning area of 10 µm × 10 µm, respectively. The compositional analysis was done by Energy Dispersive X-Ray Analysis. Finally, the ultraviolet-visible (UV-Vis) spectrophotometer (Agilent Technology Cary Series UV-Vis-near-infrared spectrometer) was measured from 200 nm to 1500 nm to investigate the optical properties of the samples. Findings The InGaN/GaN thin films have been successfully grown at three different substrate temperatures. The indium composition reduced as the temperature increased. At 760 C, the highest indium composition was obtained, 21.17%. This result was acquired from the simulation fitting of ω−2θ scan on (0002) plane using LEPTOS software by Bruker D8 Discover. The InGaN/GaN shows significantly different surface morphologies and topographies as the indium composition increases. The thickness of InGaN epilayers of the structure was ∼300 nm estimated from the field emission scanning electron microscopy. The energy bandgap of the InGaN was 2.54 eV – 2.79 eV measured by UV-Vis measurements. Originality/value It can be seen from this work that changes in substrate temperature can affect the indium composition. From all the results obtained, this work can be helpful towards efficiency improvement in solar cell applications.

show abstract

InGaN based Schottky barrier solar cell: Study of the temperature dependence of electrical characteristics

Yusof,

Ould Saad Hamady,

Hassan

et al. 2024

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

Analysis using a two-layer model of the transport properties of InGaN epilayers grown on GaN template substrate

Cited by 3 publications

References 27 publications

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

InGaN based Schottky barrier solar cell: Study of the temperature dependence of electrical characteristics

Contact Info

Product

Resources

About