Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs

Deng, Erping; Zhao, Zhibin; Xin, Qingming; Zhang, Jingwei; Huang, Yuehui

doi:10.1016/j.microrel.2017.07.095

Cited by 69 publications

(30 citation statements)

References 15 publications

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“…Information regarding the influence of different circuit topology such as the unequal thermal loading experienced within a three-level converter is addressed in [31]. The ability to reduce thermal loading of the semiconductor device by the movement towards press-pack technologies (which eliminate the dominant failure mechanisms experienced in module based IGBTs but introduces new failure mechanisms such as spring fatigue [33]) is discussed in [32]. The ability to modify and improve the thermal performance of the power converter by using modulation techniques such as discontinuous pulse width modulation is discussed in [34] [35].…”

Section: Figure 2-influence Of the Thermal Behaviour Of The Igbt On Itsmentioning

confidence: 99%

Influence of the Mission Profile on The Lifetime Modelling of the Wind Turbine Power Converter – A Review

Simpson

Egea‐Àlvarez

Collu

2020

2020 9th International Conference on Renewable Energy Research and Application (ICRERA)

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Offshore wind energy is currently the leading offshore renewable energy technology and plays an essential role in achieving a low carbon economy in Europe. Offshore wind turbines, as a result of the harsher offshore environment, suffer from high O&M costs, and as such a high overall LCOE. These higher O&M costs can be reduced by focusing on the most critical subassemblies of the OWT, by either improving the reliability of the subassembly or by better understanding the failure mechanism, and thus optimizing the O&M strategy. The power converter is identified as one of the most critical subassemblies as risk of the operation of the OWT in terms of maintainability and availability. The reliability of the power converter is heavily influenced by both its steady-state and its dynamic thermal behavior, and as such great attention will be paid to the literature related to the thermal behaviour of the power converter. This paper seeks to provide a comprehensive overview on how the typical mission profile of an OWT influences the thermal loading. The paper seeks to propose a comprehensive and up-to-date literature review related to the lifetime modelling of the power converter, and to highlight some of the main challenges yet to be tackled in the reliability analysis of the power converter, suggesting future areas of research.

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Section: Figure 2-influence Of the Thermal Behaviour Of The Igbt On Itsmentioning

confidence: 99%

Influence of the Mission Profile on The Lifetime Modelling of the Wind Turbine Power Converter – A Review

Simpson

Egea‐Àlvarez

Collu

2020

2020 9th International Conference on Renewable Energy Research and Application (ICRERA)

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“…Therefore, to overcome the problem, a proper design for the IGBT gate driver is required. The need for the IGBT high voltage driver can be summarized as it is an important aspect of the project [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Design new voltage balancing control series connected for HV-IGBT`s

Fahmi

Mukmin

Fang

et al. 2021

IJECE

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<span>The insulated gate bipolar transistors (IGBTs) are widely used in various applications as they require low gate drive power and gate voltage. This paper proposes an active gain circuit to maintain voltage stability of series-connected IGBTs for high voltage applications. The novel gate driver circuit with closed-loops control amplifies the gate signal while restricting the IGBT emitter voltage below a predetermined level. With the proposed circuit, serial-connected IGBTs can replace high-voltage IGBTs (HV-IGBTs) for high-voltage applications through the active control of the gate signal time delay. Closed-loop controls function is to charged current to the gate to restrict the IGBT emitter voltage to a predetermined level. This paper also presents the experiment on the gate driver capability based on a series-connected IGBTs with three IGBTs and a snubber circuit. The experimental results show a voltage offset with active control with a wide variation in load and imbalance conditions. Lastly, the experimental results are validated with the simulation results, where the simulation results agree with the experimental results.</span>

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“…However, high current rating and ultra‐high reliability are required in the VSC‐HVDC system [6], which challenges the performance of IGBT devices. In selecting the suitable IGBT devices, there are two main packaging technologies for HV and high power application [6, 7]: wire‐bonded IGBT module and press‐pack IGBTs (PPIs). Unfortunately, wire‐bonded IGBT technology has such disadvantages as insufficient current capability for the powerful system (e.g.…”

Section: Introductionmentioning

confidence: 99%

Partial discharge measurement and analysis in PPIs

Zhao

et al. 2019

IET Power Electronics

Self Cite

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Electrical insulation capability is one of the most critical challenges for press-pack insulated gate bipolar transistors (IGBTs), but the knowledge of its insulation failure mechanism is much less mature. To understand the insulation failure mechanism, partial discharge (PD) measurement and analysis in press-pack IGBT (PPI) submodule were performed in this study. A dedicated PD measurement system for PPIs was designed and fabricated, and fast oscilloscope, PD detector and ultraviolet (UV) image camera were employed to observe the PD. PD-induced insulation failure phenomenon in the submodule was observed under direct current voltage, and UV images indicated that the discharge occurred at the periphery of the die. Phase-resolved PD (PRPD) analysis method for PPIs was developed and three elementary structures were used to simulate the PD in the electric field reinforcement areas identified by electric field analysis. According to PRPD patterns, the observed PD in the submodule was considered to be mainly caused by a mismatch between the electric field and critical electric field on the surface of passivation layers of the die. The inference was verified at different gas pressures because a decrease of PD inception voltage in the submodule and the bare die was observed at lower gas pressure.

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Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs

Cited by 69 publications

References 15 publications

Influence of the Mission Profile on The Lifetime Modelling of the Wind Turbine Power Converter – A Review

Influence of the Mission Profile on The Lifetime Modelling of the Wind Turbine Power Converter – A Review

Design new voltage balancing control series connected for HV-IGBT`s

Partial discharge measurement and analysis in PPIs

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