Analysis of variation in leakage currents of Lanthana thin films

Temperature and frequency dependent dielectric properties of dysprosium oxide grown on Si(p) substrates

“…The relative permittivity RP (ε ox ) was calculated from the accumulation capacitance [24]. The correction on RP value due to the possible formation of SiO 2 interfacial layer of thickness 1-3 nm [25][26][27][28] can be estimated by considering the "in series-connected capacitors" [29,30] to be less than 0.1 for the air-annealed sample S300. However, the strong reduction of RP of S500 might be due to the formation of silicate interlayer of effective maximum thickness estimated to be about 19.3 nm (or about 13% of total thickness).…”

Structural and electrical properties of Zn doped Mn oxide thin films grown on p-Si substrates

“…The obtained values of relative permittivity are close to each other and are not much higher than that of SiO 2 (3.82) so that the present oxide is not considered as a high-k material at room temperature. Furthermore, the estimated correction to the relative permittivity due to the possible formation of effectively 1-3 nm of Si oxide interlayer [20][21][22][23][24], calculated by the "in-series-connected capacitors" model [25] is less than 4%. The density per unit area of the charges (Q ox ) in MOS samples is estimated from the flatband voltage [26] is given in Table 1.…”

DC-conduction mechanism in crystalline oxidised La and La–Mn films grown on p-Si substrate

“…Lanthana (La 2 O 3 ) is being one of the candidates for gate dielectric to replace SiO 2 due to its suitable insulating properties [1][2][3][4][5][6][7], which are sufficient to fit to the requirements for alternative insulators [8]. Furthermore, lanthana thin-film insulators have excellent low leakage currents; 10 −4 to 10 −7 A/cm 2 at about 1 MV/cm [6,7,[9][10][11][12].…”

“…Furthermore, lanthana thin-film insulators have excellent low leakage currents; 10 −4 to 10 −7 A/cm 2 at about 1 MV/cm [6,7,[9][10][11][12]. However, it is important to know the detailed conduction mechanism in La 2 O 3 films to ensure their reliability.…”

“…However, still little is known about the mechanism of leakage current transfer in La 2 O 3 films grown on Si substrates, although, a few investigations have been recently carried out on ultrathin films prepared by electron-beam evaporation technique [6,7,21]. For vacuum- [7] and nitrogen-annealed [6] La 2 O 3 film, it was reported that the Al-gate-voltage dependence of the leakage current was governed by the space-charge-limited-current (SCLC)-or Poole-Frenkel (PF)-conduction mechanism.…”