Analysis of Transient Currents in Organic Field Effect Transistor: The Time-of-Flight Method

Weis, Martin; Lin, Jack; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

doi:10.1021/jp908381b

Cited by 48 publications

(29 citation statements)

References 19 publications

(23 reference statements)

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“…Equation (14) provides a way for estimating carrier mobility by both methods. 12,32) In detail, the OFET mobility for device illustrated in Fig. 3 reaches value of 0.094 cm 2 V À1 s À1 and the TRM-SHG mobility estimated by eq.…”

Section: Discussionmentioning

confidence: 87%

The Charge Transport in Organic Field-Effect Transistor as an Interface Charge Propagation: The Maxwell–Wagner Effect Model and Transmission Line Approximation

Weis

Lin

Taguchi

et al. 2010

Jpn. J. Appl. Phys.

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By analyzing electric field migration in the pentacene organic field-effect transistor channel (OFET), visualized using the time-resolved microscopic optical second harmonic generation (TRM-SHG) is analyzed the propagation of injected carriers. We find that the accumulated charge propagation on the pentacene-gate insulator interface of the three-electrode system is clearly different from the drift in electric field of the two-electrode system. The propagation of injected carriers is evaluated on the basis of the Maxwell-Wagner effect model and the transmission line approximation. We show that the interface charge accumulation has a significant contribution to the charge transport in OFET. Proposed model for the transient state is beyond the limits of common used impedance spectroscopy models and represents extension of the small-signal analysis. Found relation between mobility and transit time helps in analysis of OFET transit time sensitive experiments such as the time-of-flight technique (TOF) or TRM-SHG. #

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Section: Discussionmentioning

confidence: 87%

The Charge Transport in Organic Field-Effect Transistor as an Interface Charge Propagation: The Maxwell–Wagner Effect Model and Transmission Line Approximation

Weis

Lin

Taguchi

et al. 2010

Jpn. J. Appl. Phys.

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“…7 Nevertheless, fundamental researches about the OFETs from a steady-state as well as dynamic viewpoint is essential and valuable beside a pure scientific interest. 12 Hence, the electric field in the channel region cannot be studied and use of common approaches known from the two-electrode system such as a metal-insulator-metal structure may follow to misleading conclusions. One of possible reasons might be a difficulty in employing conventional experimental approaches.…”

Section: Influence Of Traps On Transient Electric Field and Mobility mentioning

confidence: 99%

“…͑5͒ to the PMMA case and the results ͑the red circles͒ were in Fig. We also evaluated a dynamic mobility on the basis of the TOF [12][13][14][15][16][17] in the same figure. We see these mobilities are almost independent of delay time.…”

Section: B the Dynamic Carrier Mobilitymentioning

confidence: 99%

Influence of traps on transient electric field and mobility evaluation in organic field-effect transistors

Manaka

Liu

Weis

et al. 2010

Journal of Applied Physics

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Articles you may be interested inEffect of reduction of trap charge carrier density in organic field effect transistors by surface treatment of dielectric layer Hole mobility enhancement of pentacene organic field-effect transistors using 4,4′,4″-tris[3methylphenyl(phenyl)amino] triphenylamine as a hole injection interlayer Appl. Phys. Lett. 99, 063306 (2011); Diindenoperylene as ambipolar semiconductor: Influence of electrode materials and mobility asymmetry in organic field-effect transistors Appl. Phys. Lett. 98, 233304 (2011); 10.1063/1.3598423Modeling carrier transport and electric field evolution in Gaussian disordered organic field-effect transistors A significant difference between the transient electric field profiles of the pentacene organic field-effect transistors ͑OFETs͒ with SiO 2 and poly͑methyl-methacrylate͒ ͑PMMA͒ insulators was found by the time-resolved microscopic optical second-harmonic generation ͑TRM-SHG͒ experiment. The profile of former device was broad and changed smoothly, while the latter one had a sharp peak. Particularly, the peak of the transient electric field in SiO 2 -insulated devices moved much faster than that in the PMMA-insulated one. Based on several experimental evidences and computational simulations, we proposed that these differences might arise from a higher trapped carrier density in the conductive channel on the PMMA insulator. Simple approaches were developed to evaluate the trap density and define dynamic carrier mobility in terms of the transient electric field measured by the TRM-SHG technique. This mobility quantitatively depicts that the transient hole transport in the OFET with the PMMA insulator is trap controlled.

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“…Furthermore, it is difficult to distinguish the carrier species, i.e., electrons or holes, only from the trace of transient currents in the e-TOF measurement [18][19][20][21][22], which is carried out by applying step voltage instead of applying laser irradiation in the laser-TOF measurement. The best way to overcome this problem is to develop a technique that can directly probe traveling carriers themselves.…”

Section: Introductionmentioning

confidence: 99%

Modeling and visualization of carrier motion in organic films by optical second harmonic generation and Maxwell-displacement current

Iwamoto¹,

Manaka²,

Taguchi³

2015

J. Phys. D: Appl. Phys.

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Probing and modeling of carrier motions in materials as well as in electronic devices is a fundamental research subject in science and electronics. According to the Maxwell electromagnetic field theory, carriers are a source of electric field. Therefore, by probing dielectric polarization caused by the electric field arising from moving carriers and dipoles, we can find a way to visualize the carrier motions in materials and in devices. The techniques used here are an electrical Maxwell-displacement current (MDC) measurement and a novel optical method based on electric field induced optical second harmonic generation (EFISHG) measurement. The MDC measurement probes changes of induced charge on electrodes, while the EFISHG probes nonlinear polarization induced in organic active layers due to coupling of electron clouds of molecules and electromagnetic waves of incident laser beam in the presence of dc field caused from electrons and holes. Both measurements allow us to probe dynamical carrier motions in solids through detection of dielectric polarization phenomena originated from dipolar motions and electron transport. In this Topical review, on the basis of the Maxwell's electro-magnetism theory in 1873, which stems from the Faraday's idea, the concept for probing electron and hole transport in solids by using the EFISHG is discussed in comparison with the conventional time of flight (TOF) measurement. We then visualize carrier transit in organic devices, i.e., organic field effect transistors, organic light emitting diodes, organic solar cells, and others. We also show that visualizing EFISHG microscopic image is a novel way for characterizing the anisotropic carrier transport in organic thin films. We also discuss the concept of the detection of rotational dipolar motions in monolayers by means of the MDC measurement, which is capable of probing the change of dielectric spontaneous polarization formed by dipoles in organic monolayers. Finally we conclude that ideas and experiments on EFISHG and MDC lead to a novel way for analyzing dynamical motions of electrons, holes, and dipoles in solids, thus these are available in organic electronic device application. to Eq. (1), we obtain the following equation:

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Analysis of Transient Currents in Organic Field Effect Transistor: The Time-of-Flight Method

Cited by 48 publications

References 19 publications

The Charge Transport in Organic Field-Effect Transistor as an Interface Charge Propagation: The Maxwell–Wagner Effect Model and Transmission Line Approximation

The Charge Transport in Organic Field-Effect Transistor as an Interface Charge Propagation: The Maxwell–Wagner Effect Model and Transmission Line Approximation

Influence of traps on transient electric field and mobility evaluation in organic field-effect transistors

Modeling and visualization of carrier motion in organic films by optical second harmonic generation and Maxwell-displacement current

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