Analysis of Transfer Gate Doping Profile Influence on Dark Current and FWC in CMOS Image Sensors

Xu, Jiangtao; Chen, Quanmin; Gao, Zhiyuan

doi:10.1109/jeds.2020.3036841

Cited by 6 publications

(1 citation statement)

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“…3a). This effect is confirmed by [20] where reduction in the dark current is reported by a shift in barrier, thereby reducing y g . It must be noted that the model for ϕ F is applicable only for V OT G ≥ 0 V and for V OT G < 0 V, a constant maximum value of y g , i.e., 0.35 µm is assumed.…”

Section: Interface Area Under the Transfer Gatesupporting

confidence: 53%

WITHDRAWN: Dark Current in Pinned Photodiode CMOS Image Sensors: A Pre-Fabrication Physics-based Model

Suharwerdi

Qazi

2023

Preprint

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The present technique to find a dark current source in an image sensor, i.e., Dark Current Spectroscopy, is not sufficient to conclusively differentiate between the contribution of interface and bulk defect generation in a pixel. Also, the dark current data is available only post-fabrication. In this work, the Dark current vs Transfer Gate-off voltage curve is used to extract the defect density-cross-section product, activation energy and maximum carrier lifetime for two important device generation sites, i.e., interface under the Transfer Gate and Pinned Photodiode depletion region. A comprehensive analytical dark current model is formulated and validated using TCAD simulation and experimental data reported in the literature. The temperature variation is incorporated using the Arrhenius relation corresponding to the specific activation energy level. The proposed model along with the Arrhenius relation provides a sufficient pre-fabrication dark current estimate.

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Section: Interface Area Under the Transfer Gatesupporting

confidence: 53%