Analysis of Transconductance $(g_{m})$ in Schottky-Barrier MOSFETs

Choi, Sung-Jin; Choi, Chel‐Jong; Kim, Jee-Yeon; Jang, Moongyu; Choi, Yang‐Kyu

doi:10.1109/ted.2010.2092778

Cited by 35 publications

(30 citation statements)

References 19 publications

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“…Similar yet unintended behavior is observed in part in Schottky contact VLSI MOSFETs [4] where the conduction mechanism across the source barrier is seen to change in a similar fashion to what is observed in thin-film SGTs.…”

Section: Introductionsupporting

confidence: 58%

“…A seamless transition between the two modes of operation occurs and as the dominant current transport mechanism changes the transfer characteristic reflects it through a dip in transconductance [4,6]. Two-dimensional numerical simulations using Silvaco Atlas ver.…”

Section: Theorymentioning

confidence: 99%

“…Contact effects in thin-film transistors are currently being investigated theoretically [1] as well as experimentally [1][2][3][4][5]. In general these effects are responsible for a degradation in device performance mainly through a reduction in current and switching speed.…”

Section: Introductionmentioning

confidence: 99%

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Leveraging Contact Effects for Field-Effect Transistor Technologies with Reduced Complexity and Superior Current Uniformity

Sporea

Georgakopoulos

et al. 2013

MRS Proc.

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In order to achieve high performance, the design of devices for large-area electronics needs to be optimized despite material or fabrication shortcomings. In numerous emerging technologies thin-film transistor (TFT) performance is hindered by contact effects. Here, we show that contact effects can be used constructively to create devices with performance characteristics unachievable by conventional transistor designs. Source-gated transistors (SGTs) are not designed with increasing transistor speed, mobility or sub-threshold slope in mind, but rather with improving certain aspects critical for real-world large area electronics such as stability, uniformity, power efficiency and gain. SGTs can achieve considerably lower saturation voltage and power dissipation compared to conventional devices driven at the same current; higher output impedance for over two orders of magnitude higher intrinsic gain; improved bias stress stability in amorphous materials; higher resilience to processing variations; current virtually independent of source-drain gap, source-gate overlap and semiconductor thickness variations. Applications such as amplifiers and drivers for sensors and actuators, low cost large area analog or digital circuits could greatly benefit from incorporating the SGT architecture.

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Section: Introductionsupporting

confidence: 58%

Section: Theorymentioning

confidence: 99%

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Leveraging Contact Effects for Field-Effect Transistor Technologies with Reduced Complexity and Superior Current Uniformity

Sporea

Georgakopoulos

et al. 2013

MRS Proc.

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“…A common feature in Schottky Barrier FETs is a peak in the transconductance g m with gate voltage [10]. This is attributed to a change in the contact injection mechanism from thermionic emission to thermionic-field emission at higher electric fields.…”

Section: Introductionmentioning

confidence: 99%

Low-Field Behavior of Source-Gated Transistors

Shannon

Sporea

Georgakopoulos

et al. 2013

IEEE Trans. Electron Devices

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-A physical description for low-field behavior of a Schottky source-gated transistor (SGT) is outlined where carriers crossing the source barrier by thermionic emission are restricted by JFET action in the pinch-off region at the drain end of the source. This mode of operation leads to transistor characteristics with low saturation voltage and high output impedance without the need for field relief at the edge of the Schottky source barrier and explains many characteristics of the SGT observed experimentally. Two-dimensional device simulations with and without barrier lowering due to the Schottky effect show that transistors can be designed so that the current is independent of source length and thickness variations in the semiconductor. This feature, together with the fact that the current in an SGT is independent of source-drain separation, hypothesizes the fabrication of uniform current sources and other large-area analog circuit blocks with repeatable performance even in imprecise technologies such as high-speed printing.

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“…It has previously been shown that carrier injection in SB FETs can occur either by thermal emission over the potential barrier or by thermally assisted tunneling through the Schottky barrier. 19,20 The gray part, fitted with the blue line, is the region associated with thermal emission over the potential barrier. In this region, carriers are injected from the source over the potential barrier, leading to a steep slope.…”

Section: B Electrical Characteristics Of a Single-channel Sinwmentioning

confidence: 99%

Electrical properties of high density arrays of silicon nanowire field effect transistors

Kim

Lee

et al. 2013

Journal of Applied Physics

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Articles you may be interested inPalladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection Appl. Phys. Lett. 104, 013508 (2014) Proximity effect corrected e-beam lithography of hydrogen silsesquioxane on silicon on insulator was used to fabricate multi-channel silicon nanowire field-effect transistors (SiNW FETs). Arrays of 15-channels with a line width of 18 nm and pitch as small as 50 nm, the smallest reported for electrically functional devices, were fabricated. These high density arrays were back-gated by the substrate and allowed for investigation of the effects of scaling on the electrical performance of this multi-channel SiNW FET. It was revealed that the drain current and the transconductance (g m ) are both reduced with decreasing pitch size. The drain induced barrier lowering and the threshold voltage (V th ) are also decreased, whereas the subthreshold swing (S) is increased. The results are in agreement with our simulations of the electric potential profile of the devices. The study contains valuable information on SiNW FET integration and scaling for future devices. V C 2013 AIP Publishing LLC.[http://dx

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Analysis of Transconductance $(g_{m})$ in Schottky-Barrier MOSFETs

Cited by 35 publications

References 19 publications

Leveraging Contact Effects for Field-Effect Transistor Technologies with Reduced Complexity and Superior Current Uniformity

Leveraging Contact Effects for Field-Effect Transistor Technologies with Reduced Complexity and Superior Current Uniformity

Low-Field Behavior of Source-Gated Transistors

Electrical properties of high density arrays of silicon nanowire field effect transistors

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