Analysis of thermal treatment effects upon optico-luminescent and scintillation characteristics of oxide and chalcogenide crystals

Ryzhikov, V. D.; Grinyov, B.; Pirogov, E. N.; Galkin, S. N.; Nagornaya, L.L.; Bondar, V. G.; Babiychuk, I.; Krivoshein, Vadim I.; Silin, V.I.; Lalayants, A. I.; Voronkin, E.; Katrunov, K.; Onishchenko, G.M.; Vostretsov, Yuriy Ya.; Malyi, Pavel Yu.; Lisetskaya, E. K.; Lisetski, L. N.

doi:10.1016/j.nima.2004.08.014

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2008

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“…Moreover, the emission spectrum (band is peaked at ∼600 nm) is convenient for detection by highsensitivity photodiodes. Emission efficiency of this material can be improved by doping [5][6][7][8][9] and aftergrowth annealing [6,[10][11][12]. Appropriate doping and thermal treatment enhance formation of stabile centres of efficient radiative emission.…”

Section: Introductionmentioning

confidence: 99%

Luminescence study of ZnSe based scintillators in frequency domain

Vitta¹

2008

Lithuanian J. Phys.

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Photoluminescence of ZnSe-based scintillation crystals is studied. Photoluminescence intensities and spectra of isoelectronically doped ZnSe(Te), ZnSe(O), and ZnSe(O,Al) are compared. Frequency domain luminescence lifetime measurement technique was applied to study carrier dynamics at low density of nonequilibrium carriers, which is typical for operation of high-sensitivity ZnSe-based radiation detectors. Temperature-dependent competition between donor-acceptor-pair-type and exponential luminescence decay components was observed.

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Section: Introductionmentioning

confidence: 99%

Luminescence study of ZnSe based scintillators in frequency domain

Vitta¹

2008

Lithuanian J. Phys.

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show abstract

Analysis of thermal treatment effects upon optico-luminescent and scintillation characteristics of oxide and chalcogenide crystals

Cited by 1 publication

References 0 publications

Luminescence study of ZnSe based scintillators in frequency domain

Luminescence study of ZnSe based scintillators in frequency domain

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