Analysis of thermal behaviour of high power semiconductor laser arrays by means of the finite element method (FEM)

Bärwolff, A.; Puchert, R.; Enders, Peter; Menzel, U.; Ackermann, Dimitri

doi:10.1007/bf02548775

Cited by 21 publications

(18 citation statements)

References 13 publications

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“…Conformal mapping has been used by Laikhtman et al (2004) and Laikhtman et al (2005) for thermal optimisation of high power diode laser bars. Relatively simple separation-of-variables approach was used by Joyce & Dixon (1975) and developed in many further works (see for example Bärwolff et al (1995) or works by the author of this chapter). Analytical models often play a very helpful role in fundamental understanding of the device operation.…”

Section: Calculation Methodsmentioning

confidence: 99%

“…2 The problem was solved analytically by Joyce & Dixon (1975). Further works using this model introduced convective cooling at the top of the laser, considered extension and diversity of heat sources or changed the thermal scheme in order to take into account the non-ideal heat sink (Bärwolff et al (1995); Puchert et al (1997); Szymański et al (2007;). Such approach allows to calculate temperature inside the resonator, while the temperature in the vicinity of mirrors is reliable only in the near-threshold regime.…”

Section: Models Based On the Heat Conduction Equation Onlymentioning

confidence: 99%

“…and using the separation of variables approach (Bärwolff et al (1995); Joyce & Dixon (1975)), one obtains the solution for T in two-fold form. In the layers above the active layer (n -even) temperature is described by…”

Section: Models Based On the Heat Conduction Equation Onlymentioning

confidence: 99%

“…Fig. 12 in Bärwolff et al (1995) shows that small voids in the solder only slightly obstruct the heat removal from the laser chip to the heat sink unless their concentration is very high. In turn, the influence of one large void is much bigger: the device thermal resistance grows nearly linearly with respect to void size.…”

Section: Limitationsmentioning

confidence: 99%

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Mathematical Models of Heat Flow in Edge-Emitting Semiconductor Lasers

Szymański¹

2011

Heat Transfer - Engineering Applications

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Section: Calculation Methodsmentioning

confidence: 99%

Section: Models Based On the Heat Conduction Equation Onlymentioning

confidence: 99%

Section: Models Based On the Heat Conduction Equation Onlymentioning

confidence: 99%

Section: Limitationsmentioning

confidence: 99%

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Mathematical Models of Heat Flow in Edge-Emitting Semiconductor Lasers

Szymański¹

2011

Heat Transfer - Engineering Applications

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“…In most cases, the maximum temperature occurs in the centre of the emitting area. In multistripe arrays, also a lateral temperature variation between the single emitters occurs, because the heat sources are distributed along this direction [7].…”

Section: Introductionmentioning

confidence: 99%

Influence of heat source distributions in GaAs/GaAlAs quantum-well high-power laser arrays on temperature profile and thermal resistance

Puchert

Menzel

Bärwolff

et al. 1997

Journal of Thermal Analysis

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The thermal behaviour of high-power GaAIAs/GaAs laser arrays is described by a comprehensive thermal two-dimensional finite-element model which takes several heat sources into account. The influence of these different heat sources on the two-dimensional temperature distribution in the laser array has been investigated. The power densities of the heat sources related to the active region were calculated by an analytic description of the temperature dependent processes as spontaneous emission, Auger recombination and interface recombination. The results of our numerical calculation show, that the local distribution of the heat sources has a strong influence on the lateral temperature profile and on the maximum temperature in the active region of the array, i.e. on the thermal resistance. The calculated temperature profiles are in a good agreement with the measured lateral temperatures at different injection currents and heat sink temperatures. The difference between calculated and measured maximum temperature is lower than 0.75"C.

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Two‐dimensional model of heat flow in edge‐emitting laser revisited: A new and more versatile approach

Szymański

Kozłowska

Maląg

et al. 2020

Int J Numerical Modelling

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An analytical, two‐dimensional, stationary model of heat flow in edge‐emitting laser is revisited. In the work, we show how to use this approach to be able to calculate the temperature of the entire device including the most susceptible for thermal runaway region, namely the vicinity of the joint of mirrors and an active layer. Numerical tools based on our considerations are implemented in Matlab code and available at the software developer's web site. A procedure of investigation of surface recombination at facets with the help of our model combined with mirror temperature measurements is proposed. To get an insight in reasonableness of our theoretical research, we calculated temperature profiles and surface recombination velocities for example devices and successfully confronted them with results found in the literature.

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Analysis of thermal behaviour of high power semiconductor laser arrays by means of the finite element method (FEM)

Cited by 21 publications

References 13 publications

Mathematical Models of Heat Flow in Edge-Emitting Semiconductor Lasers

Mathematical Models of Heat Flow in Edge-Emitting Semiconductor Lasers

Influence of heat source distributions in GaAs/GaAlAs quantum-well high-power laser arrays on temperature profile and thermal resistance

Two‐dimensional model of heat flow in edge‐emitting laser revisited: A new and more versatile approach

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