1968
DOI: 10.1002/j.1538-7305.1968.tb01095.x
|View full text |Cite
|
Sign up to set email alerts
|

Analysis of Thermal and Shot Noise in Pumped Resistive Diodes

Abstract: This paper discusses certain important aspects of the noise behavior of a pumped resistive diode containing shot and thermal noise sources. The derivation of the following result has a central role in the discussion. It is shown that the noise behavior of a pumped diode which does not contain 1/f noise sources can be derived in a very simple way from Nyquist's theorem. This follows from the fact that the small‐signal terminal behavior of such a diode can always be represented, in the frequency range of practic… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
35
0

Year Published

1969
1969
2015
2015

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 74 publications
(36 citation statements)
references
References 12 publications
1
35
0
Order By: Relevance
“…We also simulate the cross-spectral densities (CSDs) between sidebands for both the case of diffusion noise and trap-assisted GR noise. Well-known results for the NCM for shot noise [3], [4] in junctions are verified using the simulator. In addition, we present simulation results which show good agreement between the modulated stationary noise model [15], [5], [6] for low-frequency noise in circuit simulation and microscopically cyclostationary GR noise sources in semiconductor device simulation.…”
Section: Introductionmentioning
confidence: 82%
See 2 more Smart Citations
“…We also simulate the cross-spectral densities (CSDs) between sidebands for both the case of diffusion noise and trap-assisted GR noise. Well-known results for the NCM for shot noise [3], [4] in junctions are verified using the simulator. In addition, we present simulation results which show good agreement between the modulated stationary noise model [15], [5], [6] for low-frequency noise in circuit simulation and microscopically cyclostationary GR noise sources in semiconductor device simulation.…”
Section: Introductionmentioning
confidence: 82%
“…This model has been used to describe the modulation of shot noise in diodes [3], [4] in circuit simulation and has been recently applied to the modulation of microscopic noise sources in device simulation [11]. This model applies when the correlation time of a noise process is much shorter than the period of an applied largesignal bias and is applicable to microscopic diffusion noise and GR noise phenomena.…”
Section: ) Modulated Stationary Noise Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…depth by many authors [4, [15][16][17][18][19][20]. The results of the analysis are summarized in this section.…”
Section: Generalized Mixer Analysismentioning
confidence: 99%
“…On the other hand, in general, apart from phase noise (PHN) in oscillators, simulation tool studies have paid limited attention to LF noise. Therefore, it is considered of great interest to have an accurate characterization of devices' LF noise together with reliable simulation tools for predicting its conversion to the system output, depending on the device operation regimes.The relevance of the device operation regime is shown in [3], which provides empirical evidence of the shot noise deviation with respect to the conventional model in a large-signal pumped Schottky diode, proposing an alternative model based, not on the mean current of the device, but on the smallsignal resistance, supported by a classic reference [4] and in agreement with the distinction between shot noise with constant and with time-varying rate presented in [5]. In [6], the simulation of cyclostationary noise is treated from a physically-based point of view.…”
mentioning
confidence: 99%