Analysis of the Voltage-Dependent Plasticity in Organic Neuromorphic Devices

Lee, Seunghyuk; Kim, Chang‐Hyun

doi:10.3390/electronics9010004

Cited by 5 publications

(1 citation statement)

References 23 publications

(29 reference statements)

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“…Recently, a wide range of electronic memory devices were investigated as artificial synapses, including resistive random-access memories and various types of transistors. , Memories for neuromorphic applications may have different technical requirements compared to those relevant to traditional memories. For instance, the electrical accessibility to intermediate states (i.e., analog function) is desirable, while the nonvolatility of data retention is not strictly necessary for synaptic devices. , It seems that graphene-based flexible memories are well positioned to realize next-generation portable/wearable neuromorphic systems not only because of their excellent flexibility and performances (broadly reviewed up to this point) but also because of the possibility of fine optimization of the physical charge-conducting and storage sites (through hybridization, surface, and electrochemical routes) and a future potential for fully graphene intelligent circuits combining all of the neuronal, synaptic, and interface components made of high-performance graphene electronics.…”

Section: Emerging Neuromorphic Applicationsmentioning

confidence: 99%

Flexible Graphene-Channel Memory Devices: A Review

Sattari-Esfahlan

Kim

2021

ACS Appl. Nano Mater.

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There is an increasing importance of memory technologies in our ever-digitalizing society, which is characterized by the generation and use of a tremendous amount of real-time data. Beyond traditional performance requirements, mechanical flexibility of memory systems becomes therefore critical to enabling emerging applications such as the Internet of things. Graphene, now an established nanomaterial platform, is a promising element for building such high-performance memories with an unconventional form factor because of its exceptional electrical conductivities, outstanding mechanical properties, and processing versatility desirable for hybrid integration. Here, we provide an overview of recently developed flexible memory devices based on graphene and its functionalized counterparts. A defining feature of this review is that it exclusively compares and analyzes the devices that meet the following two criteria: (i) an explicit demonstration of working devices on a flexible substrate is reported; (ii) graphene is employed as an active channel rather than as an electrode. Our primary focus is to systematically classify various types of memories, in view of their materials, structural, and functional characteristics. For this, the shapes and compositions of the conductive channel, the key operational mechanisms underlying the electrical functionalities, and the major characteristics of representative device structures and materials systems are carefully evaluated. Furthermore, the applicability of flexible graphene memories to the neuromorphic computing area is discussed. Finally, we address several remaining issues that need to be solved for future technological advancements.

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Section: Emerging Neuromorphic Applicationsmentioning

confidence: 99%

Flexible Graphene-Channel Memory Devices: A Review

Sattari-Esfahlan

Kim

2021

ACS Appl. Nano Mater.

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Bioinspired Transistors

Kim

2023

Organic and Inorganic Materials Based Sensors

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Recent Advances in Flexible Organic Synaptic Transistors

Liu

Huang

et al. 2021

Adv Elect Materials

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organic electronic devices have attracted substantial attention. [18][19][20][21][22][23][24] However, many issues still exist. For instance, the flexible substrates can be easily bent and thus cause damage to the devices or affect their electrical performance. Moreover, the flexible substrates are sensitive to operating conditions and are unstable during longterm operation. [25][26][27][28][29] Therefore, many research groups have dedicated their efforts to study and improve the flexibility and stretchability of organic electronic devices. [30][31][32][33] In recent years, organic three-terminal synaptic transistors have evolved from two-terminal devices to avoid the problem of crosstalk between adjacent cells. [34] This is an evolutionary structural design to improve the function of organic synaptic devices. In addition, the organic three-terminal synaptic transistors can be designed to form a highly interconnected neural network system. [35] At the same time, the organic three-terminal synaptic transistors can concurrently receive and read stimuli, which is conducive to the design of multiple input devices. [36] Currently, the threeterminal artificial synapses devices based on flexible organic transistors are considered to be the representative structures of biomimetic devices, which can be used to simulate the plasticity of biological synapses. [37,38] Compared with the traditional inorganic synaptic devices, the flexible organic synaptic transistors (FOSTs) can be used to simulate the plasticity of the human brain with a simpler structure and lower manufacturing cost. Therefore, a FOST is a promising component of future organic neuromorphic systems. [39][40][41][42][43][44][45][46] To date, the FOSTs have been widely used in wearable electronic devices and intelligent e-skins. [47][48][49] In 2018, a flexible artificial afferent nerve was reported by Xu et al. [47] representing significant progress toward the development of intelligent e-skin and soft robotics. This paper reviews the recent progress in the development of FOSTs and their applications in neuromorphic systems. Generally, the FOSTs are divided into four categories: flexible organic floating-gate synaptic transistors (FO-FGSTs), flexible organic ferroelectric-gate synaptic transistors (FO-FeGSTs), flexible organic electrolyte-gate synaptic transistors (FO-EGSTs), and flexible organic optoelectronic synaptic transistors (FO-OSTs). First, a brief introduction of the device structure mostly used in the FOSTs is provided. Then, the selection of substrate materials, gate dielectric materials, organic channel materials, and electrode materials in the FOSTs is summarized. Next, the major advances of these FOSTs and their potential applications are reviewed and discussed. Lastly, the summary, outlook, and In recent years, flexible organic synaptic transistors have attracted considerable attention due to their flexibility, biocompatibility, easy processability, and reduced complexity. Flexible organic synaptic transistors have functions and structures sim...

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Analysis of the Voltage-Dependent Plasticity in Organic Neuromorphic Devices

Cited by 5 publications

References 23 publications

Flexible Graphene-Channel Memory Devices: A Review

Flexible Graphene-Channel Memory Devices: A Review

Bioinspired Transistors

Recent Advances in Flexible Organic Synaptic Transistors

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