Analysis of the thermal modes of Focal Plane Arrays

Pevtsov, E Ph; Demenkova, T A; Luchnikov, P A; Vetrova, V V

doi:10.1088/1757-899x/168/1/012095

Cited by 7 publications

(6 citation statements)

References 6 publications

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“…However, acoustic signals propagate along the sample and participate in MET of electrical double layers during mechanical action on rocks. As a result, the same mechanisms of MET can be expected as in the case of deformation or triboelectrification during acoustic excitation of electrified calcites (marbles) and in the absence of mechanical action [28,29].…”

mentioning

confidence: 61%

Polarization and Electromagnetic Emissions of Natural Crystalline Structures upon Acoustic Excitation

Беспалько

Суржиков

Fedotov

et al. 2019

MSF

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mentioning

confidence: 61%

Polarization and Electromagnetic Emissions of Natural Crystalline Structures upon Acoustic Excitation

Беспалько

Суржиков

Fedotov

et al. 2019

MSF

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“…The purpose of this work was to obtain a new data on defects in GaN-based structures by photoluminescence methods and develop examination methods and method of inward express-testing of wafers with heterostructures before starting their production. Photoluminescence has been used to make the "maps" of "yellow" photoluminescence over the area of AlGaN/GaN/SiC and AlGaN/GaN/sapphire heterostructures [4][5][6][7][8]. Classic spectrum of "yellow" photoluminescence has been observed, and great variation of a signal over the area of samples related to yellow photoluminescence has been obtained.…”

Section: Examination Of Photoluminescencementioning

confidence: 99%

The application of the Methods of Cathodoluminescence and Photoluminescence for Non-destructive Testing of AlGaN Heterostructures

Kontsevoy

Pevtsov

Khmelnitskiy

et al. 2017

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. This paper examines cathodoluminescence spectra of samples on sapphire substrates to develop methods of non-destructive testing of wafers with AlGaN/GaN heterostructures. It has been determined that the cathodoluminescence peak of AlGaN compound was demonstrated for decreased energy of excitation electrons (at 0.5 eV and 1 keV) only. Cathodoluminescence peak of AlN compound with energy of 6.15 eV was demonstrated at any excitation energy of 0.5 to 6.15 eV. It has been demonstrated that cathodoluminescence spectrum analysis allowed determining aluminum percentage in AlGaN, which was essential for inward testing of wafers for microwave transistors production. Data on the intensity distribution of "yellow" photoluminescence over the wafer surface has been obtained, and it has been demonstrated that these measurements were a prospective method of non-destructive testing to sorting wafers by defects. IntroductionThere are a number of publications which state that in order to obtain high-quality AlGaN/GaN-based high electron mobility transistors, Al content in the AlGaN layer should be within the range of 20 to 35 %. The main purpose of this work is to develop cathodoluminescence methods as implements for non-destructive testing in order to determine aluminum content in heterostructures before their production is started. Methods of cathodoluminescence and photoluminescence are effectively used for examination of properties of wide-band gap materials and structures, in particular, for examination of dislocation nature in GaN thin films and for control of self-radiation related to a band-to-band junction [1][2][3]. Cathodoluminescence and photoluminescence allow detecting the defects related to luminescence in the visible spectrum. The relation between the so-called "yellow" cathodoluminescence excited by electrons of various energy and resistance of ohmic contacts of a GaN source and drain of microwave transistors has been ascertained. Aluminum content in AlGaN layers has been examined, in particular, in the work [3], however, thick layers of specified material (hundreds of nanometers thick) have been used. In this work, AlGaN layers with a thickness of 20nm have been examined.

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“…Traditionally electron-beam lithography with three-layered resist system PMMA/(PMMA&PMAA, copolymer)/PMAA is used in creation of T-shaped gates. Since that technique is based on the difference in exposure speed of copolymer and PMMA, during the formation of T-shaped gate the size of its pin will be strongly influenced by the exposure time, copolymer thickness and it chemical composition [4][5][6][7][8].…”

Section: Control Of T-shaped Lock Formation Processesmentioning

confidence: 99%

Focused Ion Beam Methods for Research and Control of HEMT Fabrication

Pevtsov

Беспалов

Demenkova

et al. 2017

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. The combination of ion-beam spraying and raster electronic microscopy allows to receive images of sections of defects of the growth nature origin in epitaxial films on GaN basis with nanodimensional permission, to carry out their analysis and classification irrespective of conditions of receiving. Results of application of the specified methods for the analysis of technological operations when forming the microwave transistors are considered: formations of locks, receiving of holes and drawing of contacts.

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Analysis of the thermal modes of Focal Plane Arrays

Cited by 7 publications

References 6 publications

Polarization and Electromagnetic Emissions of Natural Crystalline Structures upon Acoustic Excitation

Polarization and Electromagnetic Emissions of Natural Crystalline Structures upon Acoustic Excitation

The application of the Methods of Cathodoluminescence and Photoluminescence for Non-destructive Testing of AlGaN Heterostructures

Focused Ion Beam Methods for Research and Control of HEMT Fabrication

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