Analysis of the Sub-surface Damage of mc- and cz-Si Wafers Sawn with Diamond-plated Wire

Buchwald, Rajko; Fröhlich, Kilian; Würzner, Sindy; Lehmann, Toni; Sunder, Kirsten; Möller, Hans Joachim

doi:10.1016/j.egypro.2013.07.363

Cited by 24 publications

(13 citation statements)

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“…This investigation is based on previous scratch tests with a sapphire needle [5,8]. Similar studies are carried out by Wu et al [9].…”

Section: Introductionmentioning

confidence: 90%

“…Two types of interactions are possible: the indentation of a single hard particle and the scratching of a particle over the surface. Whereas particle indentation has been studied extensively for many materials [2,3], the damage structure by scratching, which occurs during grinding processes or in sawing with diamond coated wires, has been investigated much less [4]. For the investigations a new scratch tester has been developed, which allows the analysis of single scratching events under well-defined conditions.…”

Section: Introductionmentioning

confidence: 99%

“…2 Experimental procedure 2.1 Scratch tester To induce scratches under comparable conditions as in a real sawing or grinding process a high speed scratch tester is needed [5][6][7]. This investigation is based on previous scratch tests with a sapphire needle [5,8].…”

Section: Introductionmentioning

confidence: 99%

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Surface damage and mechanical strength of silicon wafers

Würzner

Buchwald

Möller

2015

Phys. Status Solidi C

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The fracture strength of silicon wafers used for photovoltaic and microelectronic applications mainly depends on the damage structure, which is introduced on the surface during processing of the wafers. The present paper investigates the formation and development of the damage structure by scratching, which occurs during grinding processes or when sawing with diamond coated wires. The basic scratching process has been studied with a newly developed scratch technique, where test parameters comparable to a real process could be used. Single scratch tests have been performed with diamond particles on monocrystalline silicon wafers with a defined surface orientation and under different applied forces. The resulting microcrack structure, which develops under the surface, has been investigated by confocal laser scanning microscopy, scanning electron microscope and Raman spectroscopy. Details of the shape, depth and distance of the cracks have been obtained by high quality sample cross sections. The orientations of the main microcrack planes are determined

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“…This investigation is based on previous scratch tests with a sapphire needle [5,8]. Similar studies are carried out by Wu et al [9].…”

Section: Introductionmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

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Surface damage and mechanical strength of silicon wafers

Würzner

Buchwald

Möller

2015

Phys. Status Solidi C

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“…Therefore, the wires cannot be loaded as much which reduces the performance. In the electroplating technique, the particles are embedded in a nickel-coating layer, which gives a stronger bond, but at (Buchwald et al, 2013a). the expense of the cost.…”

Section: Slurry-based Sawingmentioning

confidence: 99%

Wafering of Silicon

Möller

2015

Semiconductors and Semimetals

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“…The sub-surface damage mainly consists of microcracks [1,11]. The depth of the microcracks can be influenced by the sawing process parameters and particularly depends on wire velocity and wire wear.…”

Section: Determination Of Microcrack Depthsmentioning

confidence: 99%

Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry

Würzner

Herms²,

Kaden

et al. 2017

Energies

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Abstract:A detailed approach to evaluate the sub-surface damage of diamond wire-sawn monocrystalline silicon wafers relating to the sawing process is presented. Residual stresses, the presence of amorphous silicon and microcracks are considered and related to diamond wire velocity and cutting ability. In particular, the degree of amorphization of the wafer surface is analyzed, as it may affect the etching performance (texturing) during solar cell manufacture. Raman spectroscopy and Scanning Infrared Stress Explorer (SIREX) measurements are used independently as non-destructive, contactless optical characterization methods to provide stress imaging with high spatial resolution. Raman mappings show that amorphous silicon layers can occur inhomogeneously across the surface of diamond wire-sawn wafers. The Raman and SIREX results reveal a connection between a higher fraction of the amorphous phase, a more inhomogeneous stress distribution and a lower peak maximum of the stress difference on wafers, depending on both the wire wear and the wire velocity. SIREX line scans of the in-plane difference of the principal stress components ∆σ taken across the sawing grooves show significant differences in magnitude and periodicity. Furthermore, the results are compared with the microcrack depth from the same investigation areas. The possibility to optimize the diamond wire sawing processes by analyzing the sub-surface stress of the wafers is offered by complementary use of both Raman and SIREX measurements.

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Analysis of the Sub-surface Damage of mc- and cz-Si Wafers Sawn with Diamond-plated Wire

Cited by 24 publications

References 0 publications

Surface damage and mechanical strength of silicon wafers

Surface damage and mechanical strength of silicon wafers

Wafering of Silicon

Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry

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