Analysis of the Spontaneous Emission Limited Linewidth of an Integrated III–V/SiN Laser

Chow, Weng W.; Wan, Yating; Bowers, John E.; Grillot, Frédéric

doi:10.1002/lpor.202100620

Cited by 19 publications

(11 citation statements)

References 35 publications

(60 reference statements)

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“…To carry out the modal intensities and lasing frequencies within the compound cavity, we followed the formulated theoretical analysis given in Ref. 61 . The theoretical approach includes a) multimode laser interaction to treat mode competition and wave mixing, b) quantum-optical contributions from spontaneous emission and c) composite laser/free-space eigenmodes to describe outcoupling and coupling among components within an extended cavity.…”

Section: Methodsmentioning

confidence: 99%

Linewidth narrowing in self-injection-locked on-chip lasers

Wan

Alkhazraji

Chow

et al. 2023

Preprint

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Stable laser emission with narrow linewidth is of critical importance in many applications, including coherent communications, LIDAR, and remote sensing. In this work, the physics underlying spectral narrowing of self-injection-locked on-chip lasers to Hz-level lasing linewidth is investigated using a composite-cavity structure. Heterogeneously-integrated III-V/SiN lasers operating with quantum-dot and quantum-well active regions were analyzed with a focus on the effects of carrier quantum confinement. The intrinsic differences were associated with gain saturation and carrier-induced refractive index, which were directly connected with 0- and 2-dimensional carrier densities of states. Results from parametric studies were presented for tradeoffs involved with tailoring linewidth, output power, and injection current with different device configurations. A multi-objective optimization analysis was provided to optimize the operation and design parameters, serving as an analytical tool for parametric studies to produce timely results in engineering design.

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Section: Methodsmentioning

confidence: 99%

Linewidth narrowing in self-injection-locked on-chip lasers

Wan

Alkhazraji

Chow

et al. 2023

Preprint

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“…As a result, a dominant Gaussian shape emerges. [47] It should be noted that the appearance of the Gaussian component is indirectly related to the onset of the stimulated emission, as the mode locking increases in strength with rising output intensity. While the semiclassical multimode ansatz successfully explains the lineshape anomaly, it fails to describe the FWHM of the Lorentzian component of the spectrum below the laser threshold.…”

Section: Anomalous Threshold Behavior Of the Laser Lineshapementioning

confidence: 99%

Quantum Fluctuations and Lineshape Anomaly in a High‐β Silver‐Coated InP‐Based Metallic Nanolaser

Koulas‐Simos

Buchgeister

Drechsler

et al. 2022

Laser & Photonics Reviews

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Metallic nanocavity lasers provide important technological advancement toward even smaller integrable light sources. They give access to widely unexplored lasing physics in which the distinction between different operational regimes, like those of thermal or coherent light emission, becomes increasingly challenging upon approaching a device with a near-perfect spontaneous-emission coupling factor 𝜷. In fact, quantum-optical studies have to be employed to reveal a transition to coherent emission in the intensity fluctuation behavior of nanolasers when the input-output characteristic appears thresholdless for 𝜷 = 1 nanolasers. Here, a new indicator for lasing operation in high-𝜷 lasers is identified by showing that stimulated emission can give rise to a lineshape anomaly manifested as a transition from a Lorentzian to a Gaussian component in the emission linewidth that dominates the spectrum above the lasing threshold.

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“…The theory formulated for the study tracks the modal intensities and lasing frequencies within a compound cavity. [22] For the 𝑛 𝑡ℎ composite-cavity mode, the intensity 𝐼 𝑛 and lasing frequency 𝑑𝜓 𝑛 𝑑𝑡 ⁄ evolve according to…”

Section: Laser Equationsmentioning

confidence: 99%

Comparison of linewidth narrowing in quantum-dot and quantum-well integrated III-V/SiN lasers

Wan

Chow

Alkhazraji

et al. 2022

Preprint

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This paper describes an analysis of integrated III-V/SiN lasers operating with quantum-dot and quantum-well active regions. We focus on the effects of 0- and 2-dimensional carrier densities of states on linewidth narrowing. The theoretical approach includes a) multimode laser interaction to treat mode competition and wave mixing, b) quantum-optical contributions from spontaneous emission and c) composite laser/free-space eigenmodes to describe outcoupling and coupling among components within an extended cavity. The approach is able to describe the progression to Hz-level lasing linewidth observed in III-V/SiN lasers with quantum-dot active regions. In addition, it predicts that the integration of III-V/SiN mitigates the high quantum-well linewidth enhancement factor, resulting in similar Hz-level linewidth performance. Tradeoffs are explored among linewidth, output power and injection current.

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Analysis of the Spontaneous Emission Limited Linewidth of an Integrated III–V/SiN Laser

Cited by 19 publications

References 35 publications

Linewidth narrowing in self-injection-locked on-chip lasers

Linewidth narrowing in self-injection-locked on-chip lasers

Quantum Fluctuations and Lineshape Anomaly in a High‐β Silver‐Coated InP‐Based Metallic Nanolaser

Comparison of linewidth narrowing in quantum-dot and quantum-well integrated III-V/SiN lasers

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