Analysis of the silicon solar cells efficiency. Type of doping and level optimization

Abstract

(A.V. Sachenko), vkost@isp.kiev.ua (V.P. Kostylyov), n.v.gerasimenko@mail.ru (M.V. Gerasymenko), romkin.ua@gmail.com (R.M. Korkishko), n_kulish@yahoo.com (M.R. Kulish), nslip@kture.kharkov.ua (M.I. Slipchenko), i.o.sokolovskyi@gmail.com (I.O. Sokolovskyi), vvch@isp.kiev.ua (V.V. Chernenko) Abstract. The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley-Read-Hall recombination in the silicon bulk is determined by the deep level of Fe. It has shown that, due to asymmetry of recombination parameters inherent to this level, the photovoltaic conversion efficiency is increased in SC with the n-type base and decreased in SC with the p-type base with the increase in doping. Two approximations for the band-to-band Auger recombination lifetime dependence on the base doping level are considered when performing the analysis. The experimental results are presented for the key characteristics of SC based on a-Si:H-n-Si heterojunctions with intrinsic thin layer (HIT). A comparison between the experimental and calculated values of the HIT cell characteristics has been made. The surface recombination velocity and series resistance are determined from it with a complete coincidence of the experimental and calculated SC parameters' values. Apart from the key characteristics of SC, surface recombination rate and series resistance were determined from the results of this comparison, in full agreement with the experimental findings.

The prospective application of a graphene/MoS2heterostructure in Si-HIT solar cells for higher efficiency

“…At N D > 10 16 cm À3 , the V OC increased to 646.1 mV as N D was increased to 10 18 cm À3 . At a low value of N D , the consistency of V OC indicates that it does not depend on N D unless the condition Dn o [ N D is followed, as reported previously,56 in which Dn o represents the excess electron-hole pairs. At N D > 10 16 cm À3 , the V OC increases owing to enhancement in the eV bi according to eqn(2).…”

Chemical and electronic structure of the heavily intermixed (Cd,Zn)S:Ga/CuSbS2 interface

“…This indicates a signicantly higher p-type doping or a less pronounced downwards band bending towards the absorber surface (i.e., veering away from a benecial conduction type inversion); both effects can have a detrimental impact on charge carrier collection in respective solar cells. 31,32 Due to the already discussed charging issues for samples with thick (10 and 50 nm) (Cd,Zn)S:Ga buffer layers (see Fig. S3 † and related discussion), we do not follow the conventional approach of deriving the VBM of the 50 nm thick buffer layer sample and subsequent determination of the interface-induced band bending to obtain the VB offset (VBO, see ref.…”

“…, veering away from a beneficial conduction type inversion); both effects can have a detrimental impact on charge carrier collection in respective solar cells. 31,32…”

Location and Properties of Carrier Traps in mc‐Si Solar Cells Subjected to Degradation at Elevated Temperatures

“…This agrees with the dependence of the Shockley-Read-Hall (SRH) recombination rate on dopant concentration, which was considered in previous studies. [48,49] Calculations and the experimental data presented in the study by Sachenko et al [50] suggest that in solar cells with a ptype base and deep-level traps (Fe-related traps were considered) the Schockley-Read-Hall (SRH) carrier lifetime decreases substantially with dopant concentration, especially for N D > 10 16 cm À3 .…”