1993
DOI: 10.1088/0953-8984/5/18/008
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Analysis of the Si(111)5*5-2*1 phase boundary

Abstract: Expxhentd scanning hmnelling microscopy data for the Si(II1)S x 5-2 x 1 phase boundary are analysed with reference to lhe structure of the 2 x I surface. The height change data are subjed to significant correction facton, making interpretation difficult due to the small theoretical differences involved. The theoxtical lateral differences are much larger. being 3.3 A, and these are analysed.

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Cited by 4 publications
(4 citation statements)
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“…Therefore, the large value of the observed [112]-direction corrugation is very difficult to reconcile with the MP model, although it arises naturally from the TBS structure. In this connection we note that STM height scans performed across a 5 × 5 to 2 × 1 phase boundary [35] were consistent with the observed lateral space between the structures using the TBS model, but there was a 0.33 nm lateral anomaly if the MP model was used [21].…”
Section: Discussionsupporting
confidence: 77%
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“…Therefore, the large value of the observed [112]-direction corrugation is very difficult to reconcile with the MP model, although it arises naturally from the TBS structure. In this connection we note that STM height scans performed across a 5 × 5 to 2 × 1 phase boundary [35] were consistent with the observed lateral space between the structures using the TBS model, but there was a 0.33 nm lateral anomaly if the MP model was used [21].…”
Section: Discussionsupporting
confidence: 77%
“…STM senses contours of equal charge density outside the atom cores. Estimates of small height differences in STM studies are subject to many factors, discussed in some detail for the case of a 5 × 5 to 2 × 1 boundary [21], and the quantitative values observed can be affected by tip voltage and scanning conditions as seen from data in [3]. However, atomic steps of theoretical height difference 0.313 nm are readily measured and have been studied in detail [3].…”
Section: Discussionmentioning
confidence: 99%
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