Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field

Abstract

Articles you may be interested inElectric field induced oscillating electron mobility in asymmetric wide GaAs/AlxGa1−xAs quantum well structure Electric field effects on electron mobility in n-AlGaAs/GaAs/AlGaAs single asymmetric quantum wells J.Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well Appl. Phys. Lett. 78, 3448 (2001); 10.1063/1.1376154 Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In 0.2 Ga 0.8 As/Al 0.2 Ga 0.8 As quantum well grown by metalorganic vapor phase epitaxyThe scattering rates for the intra-and intersubband transitions of electrons in a GaAs/AlAs quantum well with a central AlAs thin layer assisted by the emission and absorption of optical phonon modes are calculated in the case where a transversal electric field is applied through the structure in order to modulate the electronic density inside the well. The role of the confined and interface phonon modes in reducing the electron mobility is analyzed separately to permit the identification of the effect of the transversal electric field on this mobility. The electron behavior indicates that electrons of different subbands can be separated in real space by the applied transversal electric field.

Axial interface optical phonon modes in a double-nanoshell system

“…Since the pioneering works of Fuch and Kliewer [1] and Licari and Evrad [2] on the polar vibration modes in coupling quantum well (CQW) systems, the study of electronphonon interactions in low-dimensional quantum structures have attracted much interest [3][4][5][6][7][8][9][10][11][12].…”

Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier

“…In several theoretical papers [6][7][8][9] it has been calculated that the introduction of thin AlAs barriers in rectangular QWs leads to suppression of intersubband scattering by optical phonons, which in turn enhances the electron mobility. Other theoretical work has argued against an observable enhancement of the mobility [10,11]. Clearly, consensus is lacking.…”