Analysis of the performance of InxGa1−xN based solar cells

Hernández-Gutiérrez, C.A.; Morales‐Acevedo, Arturo; Cardona, Dagoberto; Contreras‐Puente, G.; López‐López, M.

doi:10.1007/s42452-019-0650-x

Cited by 9 publications

(5 citation statements)

References 26 publications

(56 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…So, the available experimental transport properties reports are employed to supply our theoretical model to predict the optoelectronic properties in dark conditions and under the illumination of 254-nm UVC light. The reverse saturation current due to diffusion and recombination is expressed as 20 – 22 J0=qDnni2SnLnDn cosh HpLn+sinh HpLnLnNaSnLnDn sinh HpLn+cosh HpLn+qDpni2SpLpDp cosh xj…”

Section: Physical Model and Spice Codementioning

confidence: 99%

Theoretical modeling and design aspects of cubic-phase GaN homojunction-based UVC light sensor

et al. 2022

Self Cite

View full text Add to dashboard Cite

We designed a cubic-phase gallium nitride (c-GaN) homojunction for ultraviolet-C (UVC) detection. A physical model approach was employed to design the dimensions of the detector and the doping concentrations of each layer. The calculated electrical and optoelectronic properties were employed to perform a simulation program with integrated circuit emphasis (SPICE) equivalent circuit model to integrate c-GaN photodetection capabilities into a CAD electronic simulator. The model allows estimating the transport properties in the darkness and under ultraviolet (UV) illumination conditions. Furthermore, the effect of depletion capacitance was taken into account thinking in the circuitry amplification stage. When a transient UVC flash occurs, the SPICE simulation revealed that the output signal is in the order of 300 μV, which is suitable to be amplified by a transimpedance amplifier.

show abstract

Section: Physical Model and Spice Codementioning

confidence: 99%

Theoretical modeling and design aspects of cubic-phase GaN homojunction-based UVC light sensor

et al. 2022

Self Cite

View full text Add to dashboard Cite

show abstract

“…One of the ways of development of photovoltaic cells concerns Cu 2 ZnSnS 4 (CZTS) thin films [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. CZTS has the band gap of ~1.50 eV, being a very close value to the best band gap required by a semiconductor solar cell (according to Shockley–Queisser theory) −1.4–1.45 eV [ 8 , 9 ]. Thanks to features such as the direct band gap and a high absorption coefficient, CZTS material can be applied as the absorption layer of thin film solar cells.…”

Section: Introductionmentioning

confidence: 99%

Formation and Characterization of Stable TiO2/CuxO-Based Solar Cells

Wisz,

Sawicka-Chudy,

Sibiński

et al. 2023

Materials

View full text Add to dashboard Cite

According to increasing demand for energy, PV cells seem to be one of the best answers for human needs. Considering features such as availability, low production costs, high stability, etc., metal oxide semiconductors (MOS) are a focus of attention for many scientists. Amongst MOS, TiO2 and CuxO seem to be promising materials for obtaining an effective photoconversion effect. In this paper, specific investigation, aimed at the manufacturing of the complete photovoltaic structure based on this concept is described in detail. A set of samples manufactured by DC magnetron sputtering, with various process parameters, is characterized by morphology comparison, layer structure and material composition investigation, and finally by the obtained photovoltaic parameters. Based on SEM studies, it was established that the films are deposited uniformly and complete their formation; without clearly defined faces, the conglomerates of the film grow individually. These are areas with a uniform structure and orientation of atoms. The sizes of conglomerates are in a normal direction range from 20 to 530 nm and increase with film thickness. The film thickness was in the range from 318 to 1654 nm, respectively. The I-V study confirms the photovoltaic behavior of thin film solar cells. The open-circuit voltage (Voc) and short-circuit current density (Jsc) values of the photovoltaic devices ranged from 1.5 to 300 mV and from 0.45 to 7.26 µA/cm3, respectively, which corresponds to the maximum efficiency at the level of 0.01%. Specific analysis of the junction operation on the basis of characteristics flow, Rs, and Rsh values is delivered.

show abstract

“…Most recently, it was reported that In x Ga 1−x N-based solar cells have significantly low levels of photovoltaic efficiency. However, their superior resistance to irradiation damage makes them suitable for applications in optoelectronic devices [5]. To improve the performance of these solar cells, it is necessary to search for nontoxic and elementally abundant light-absorbing materials.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation, Preparation, and Evaluation of Cu(In, Ga)Se2 (CIGS) Thin-Film Solar Cells

Albiss,

Al-Widyan

2023

ChemEngineering

View full text Add to dashboard Cite

This study presents the numerical simulation, optimization, preparation, and characterization of Cu(In, Ga)Se2 (CIGS) thin-film solar cells (TFSCs). Different cell parameters were investigated, including Ga/(Ga+In) (GGI) ratios, the thicknesses of CIGS absorption layers, the fill factor (FF), the open-circuit voltage (Voc), and the short-circuit current (Isc). The effects of the simulated parameters on the power conversion efficiency (η) of each prototype CIGS cells were investigated. The optimal GGI ratio was approximately 0.6. Using COMSOL Multiphysics software, a CIGS layer thickness of 2 μm and an η of 17% was calculated, assuming constant operating temperatures. Moreover, prototype CIGS solar cells with various compositions were prepared via a simple and cost-effective method based on sol–gel, sonication, and spin-coating techniques. The microstructures and electrical and optical properties of the CIGS-based solar cells were evaluated using current–voltage (I-V) characteristics, scanning electron microscopy (SEM), X-ray diffraction, atomic force microscopy (AFM), and UV-vis spectroscopy. The elemental compositions of the solar cell layers were evaluated via energy-dispersive X-ray fluorescence (EDXRF). The obtained results were compared with the experimental results. For example, in a prototype cell with a CIGS absorption layer thickness of 2 μm and a GGI ratio of 0.6, the experimental value of η was about 15%. Our results revealed that the agreement between the simulation results and the experimental findings for most of the simulated parameters is quite good. These findings indicate that a non-destructive analysis based on EDXRF is a versatile tool for evaluating CIGS solar cells in a very short time with excellent repeatability for both layer composition and thickness.

show abstract

Analysis of the performance of InxGa1−xN based solar cells

Cited by 9 publications

References 26 publications

Theoretical modeling and design aspects of cubic-phase GaN homojunction-based UVC light sensor

Theoretical modeling and design aspects of cubic-phase GaN homojunction-based UVC light sensor

Formation and Characterization of Stable TiO2/CuxO-Based Solar Cells

Numerical Simulation, Preparation, and Evaluation of Cu(In, Ga)Se2 (CIGS) Thin-Film Solar Cells

Contact Info

Product

Resources

About