Analysis of the optical and electronic characteristics of Al/NiPc complex/p-Si diode

Abstract

The primary goal of this work is to explore how the introduction of the Nickel (II) phthalocyanine tetrasulfonic acid tetrasodium salt (NiTsPc) organic interlayer influences the performance of conventional metal/semiconductor diodes. Firstly, the optical features of the NiTsPc organic film formed onto glass substrate were investigated. For this, the UV-Vis spectroscopic data were used to determine various optical parameters like absorption coefficient (), extinction coefficient (k), and refractive index (n). Then, Al/NiTsPc/p-Si diode was produced by forming ohmic and rectifier contact. The current-voltage (I-V) measurements were analyzed taking into account thermionic emission (TE) approach at room temperature. Device parameters such as ideality factor (η), barrier height (Φb), and resistance were investigated with the help of I-V technique. The Al/p-Si structure containing NiTsPc film showed good rectifying properties. In this analysis, Φb and η values were determined as 0.83 eV and 1.41, respectively, at room temperature. The device represents photovoltaic features with open-circuit voltage (Voc) of 0.37 V and a short-circuit current (Isc) of 8.17 µA under illumination of 100 mWcm-2. The results represent that the produced junction can be utilized in different photoelectric applications.