2011
DOI: 10.1016/j.jmmm.2010.10.026
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Analysis of the magnetoresistance contributions in a nanocrystallized Cr-doped FINEMET alloy

Abstract: a b s t r a c tThe magnetoresistance (MR) was measured at 200, 250 and 300 K in magnetic fields up to B ¼ 12 T for a nanocrystallized Fe 63.5 Cr 10 Nb 3 Cu 1 Si 13.5 B 9 alloy. Both the longitudinal (LMR) and transverse (TMR) component of the magnetoresistance decreased from B ¼ 0 to about 0.1 T. This could be ascribed to a giant MR (GMR) effect due to spin-dependent scattering of conduction electrons along their path between two Fe-Si nanograins via the non-magnetic matrix. Such a scattering may occur if the … Show more

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“…It is known that magnetoresistance is the result of spindependent scattering of conduction electrons in magnetic material and AMR arises if two successive electron scattering events occur within the same FM region, i.e., within the same Co-grain [27]. Therefore, if the conduction electron mean free path is higher than the size of Co nanograins, in this study, no AMR effect will arise.…”
Section: Directional Magnetoresistancementioning
confidence: 76%
“…It is known that magnetoresistance is the result of spindependent scattering of conduction electrons in magnetic material and AMR arises if two successive electron scattering events occur within the same FM region, i.e., within the same Co-grain [27]. Therefore, if the conduction electron mean free path is higher than the size of Co nanograins, in this study, no AMR effect will arise.…”
Section: Directional Magnetoresistancementioning
confidence: 76%