Analysis of the Influence of the Motion State of Ultra-Thin Sapphire Based on Layer-Stacked Clamping (LSC)

Chen, Zhixiang; Han, Shunkai; Feng, Ming; Zhang, Xianglei

doi:10.3390/mi14061124

Cited by 2 publications

(1 citation statement)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additionally, Chen and others proposed a stacked clamping method, establishing a numerical model based on fractal theory and experimentally verifying the model's effectiveness [17]. They also experimentally validated the polishing performance of stacked clamping [18] and studied the failure mode of limit pieces, attributing it to edge cutting causing the fracture of limit pieces [19]. The clamping mechanism of stacked clamping was investigated, analyzing the adhesive forces between the substrate and the workpiece.…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Analysis of Adhesive Forces between Silicon Wafer and Substrate in Microarray Adhesion

Han,

Chen,

Feng

et al. 2024

Lubricants

Self Cite

View full text Add to dashboard Cite

With the development of the electronics industry, the requirements for chips are getting higher and higher, and thinner and thinner wafers are needed to meet the processing of chips. In this study, a model of the adhesion state of semiconductor wafers in the stacking–clamping process based on microarray adsorption was established, the composition adhesion was discussed, the microarrays of different materials and pressures were experimentally studied, and a molecular dynamics model was established. The molecular dynamics analysis showed that the adhesion force was only related to the type of atom, and the applied pressure did not change the adhesion force. According to the simulation results, the tangential adhesion between the metal and the wafer is greater than that between the ceramic and the wafer, the adsorption force between the aluminum–magnesium alloy and the silicon wafer is shown in the normal direction, and the repulsion force between other materials and the silicon wafer is shown in the normal direction. During the pressure process, the metal is in the elastic deformation stage between the metal and the wafer, the wafer is plastically deformed in the silicon carbide ceramic and wafer, and the wafer is elastically deformed in the alumina ceramic and wafer. In this paper, the adhesion between the substrate and the wafer is studied, a method of constructing microarrays to enhance adhesion is proposed, and the tangential deformation of the array unit under pressure is studied, which provides theoretical support for increasing the adhesion by constructing microarrays.

show abstract

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Analysis of Adhesive Forces between Silicon Wafer and Substrate in Microarray Adhesion

Han,

Chen,

Feng

et al. 2024

Lubricants

Self Cite

View full text Add to dashboard Cite

show abstract

Orthogonal experimental study on the influence of machining parameters on flat lapping of sapphire substrate

Wang,

Ruan,

Xiao

et al. 2024

AIP Advances

View full text Add to dashboard Cite

Sapphire is extensively utilized in the optical, aerospace, and civil electronic industries due to its favorable optical, physical, and chemical characteristics. To enhance the efficiency and quality of sapphire lapping, an orthogonal experiment was conducted on a single-side sapphire substrate using a ceramic lapping plate. The study examined the impact of lapping plate material, lapping pressure, lapping speed, and abrasive particle size on the surface roughness, profile, and removal rate. By analyzing the signal-to-noise ratio and variance of machining parameters, the influence rule and influence of the weight of machining parameters on machining results were obtained. The results of the experiment demonstrate that the material removal rate of sapphire was positively affected by an increase in lapping pressure, speed, and abrasive particle size. Moreover, the removal rate of the SiC lapping plate was the highest among the experimental materials. The roughness of the sapphire surface decreased with increasing lapping pressure, speed, and abrasive particle size, while the SiC plate had the lowest surface roughness. The profile tolerance of sapphire diminished as the lapping pressure, lapping speed, and the abrasive particle size increased. Additionally, the ZrO2 lapping plate exhibited the most minor profile tolerance. The size of the abrasive particle significantly impacted the material removal rate, with a specific gravity exceeding 70%. Similarly, the lapping pressure had a significant effect on both the surface roughness and the profile tolerance. The ideal machining parameter combination comprised an abrasive particle size of 10 µm, a lapping pressure of 22 785.0 Pa, a lapping speed of 60 rpm, and a lapping plate of SiC. Under optimal machining conditions, sapphire exhibited a material removal rate of 0.65 µm/h, a surface roughness of 0.0920 µm, and a profile tolerance of 2.0915 µm after 20 min of lapping. This demonstrated that the lapping process enables highly efficient and high-quality machining of sapphire substrates.

show abstract

Analysis of the Influence of the Motion State of Ultra-Thin Sapphire Based on Layer-Stacked Clamping (LSC)

Cited by 2 publications

References 25 publications

Molecular Dynamics Analysis of Adhesive Forces between Silicon Wafer and Substrate in Microarray Adhesion

Molecular Dynamics Analysis of Adhesive Forces between Silicon Wafer and Substrate in Microarray Adhesion

Orthogonal experimental study on the influence of machining parameters on flat lapping of sapphire substrate

Contact Info

Product

Resources

About