2016
DOI: 10.1016/j.actamat.2016.02.032
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Analysis of the grain boundary conductivity of singly and doubly doped CeO2 thin films at elevated temperature

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Cited by 19 publications
(12 citation statements)
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“…In this regard, the increase in the preferential orientation of film will enhance the overall ionic conductivity by reducing the grain boundary resistance 71 . Similar behavior was observed in the various literature reported for the trivalent doped cerium oxide thin film 64 , 72 .
Figure 14 Arrhenius plot for a thin film with respect to the substrate temperature.
…”
Section: Resultssupporting
confidence: 91%
“…In this regard, the increase in the preferential orientation of film will enhance the overall ionic conductivity by reducing the grain boundary resistance 71 . Similar behavior was observed in the various literature reported for the trivalent doped cerium oxide thin film 64 , 72 .
Figure 14 Arrhenius plot for a thin film with respect to the substrate temperature.
…”
Section: Resultssupporting
confidence: 91%
“…The use of thin‐film samples with a vertically arrayed microstructure and very low surface roughness helps with an accurate analysis of the penetration distance of the metal impurities and in calculations of the volume ratio of the grain boundaries throughout the sample. [ 26 ]…”
Section: Resultsmentioning
confidence: 99%
“…The procedure of PLD deposition was optimized for CeO 2 thin film and well described in previous research. [ 26,44 ] After the deposition step, all of the samples were annealed in air at 700 °C for 10 h using a tube furnace.…”
Section: Methodsmentioning
confidence: 99%
“…CeO 2− δ , Sm 0.2 Ce 0.8 O 1.9− δ , ZrO 2− δ , and Y 0.08 Zr 0.92 O 1.96− δ poly-crystalline thin films were prepared by means of pulsed laser deposition (PLD) from oxide targets of the respective materials on single crystalline Al 2 O 3 (0001) substrates 10 × 10 × 0.65 mm 3 in size (Dasom RMS, Korea). CeO 2− δ and Sm 0.2 Ce 0.8 O 1.9− δ targets were prepared by a combined EDTA–citrate complexing method 59 using Ce(NO 3 ) 3 ·6H 2 O (JUNSEI Japan, 99.99% purity) and Sm(NO 3 ) 3 ·6H 2 O (Alfa Aesar, 99.9% purity) precursors, and ZrO 2− δ , and Y 0.08 Zr 0.92 O 1.96− δ targets were synthesized by a conventional solid state method using ZrO 2 (Sigma Aldrich, 99.99% purity) and Y 2 O 3 (Sigma Aldrich, 99.99% purity) powders. A coherent COMPex Pro 205 KrF excimer laser, emitting at a wavelength of 248 nm, was used for ablation with the deposition parameters of a pulsed laser energy of 270 mJ and a laser repetition rate of 20 Hz.…”
Section: Methodsmentioning
confidence: 99%