Analysis of the degradation of single‐crystalline silicon modules after 21 years of operation

Piliougine, Michel; Oukaja, Amal; Sánchez-Friera, P.; Petrone, G.; Sánchez‐Pacheco, Francisco José; Spagnuolo, G.; Sidrach‐de‐Cardona, M.

doi:10.1002/pip.3409

Cited by 23 publications

(15 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…experimentally using the guides given by IEC 60891:2021 33 and other useful recommendations. 32 However, in this paper, this process is not explained, reporting only the final values of these coefficients for a new module (a nondegraded one) of each type (see Table 5). Finally, although in the literature there are approaches to perform a correction by the angle of incident (see the Sandia Performance Model 49 ), we have not applied this type of correction to our measurements.…”

Section: Alternative Correction Proceduresmentioning

confidence: 99%

“…10,30,31 Hence, the rates obtained for the first and second analyses, which refer to the first days and to the first year, are affected to some extent by stabilization issues, being only the results of the third analysis representative of the long-term degradation. This paper relies on a previous study of degradation of PV modules from the same authors, 32 and it is based on the same measurement system. In this paper, a novel translation method has been employed to correct the I-V curves to reference conditions for determining the parameter variation.…”

Section: Introductionmentioning

confidence: 99%

“…Finally, over these three selected curves, the procedure 3 of the IEC60891:2021 33 and 4, in the same Standard is that they require to know beforehand several additional parameters. Some of them are temperature coefficients that can be found in the specification sheets of the PV modules, but referred to new as-built PV modules (hence not necessarily applicable to degraded specimens as it is our case 32 ). Moreover, some require parameters that are hardly available and that must be determined by additional sets of measurements.…”

Section: Introductionmentioning

confidence: 99%

“…This paper relies on a previous study of degradation of PV modules from the same authors, 32 and it is based on the same measurement system. In this paper, a novel translation method has been employed to correct the I‐V curves to reference conditions for determining the parameter variation.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Analysis of the degradation of amorphous silicon‐based modules after 11 years of exposure by means of IEC60891:2021 procedure 3

Piliougine

Sánchez-Friera

Petrone

et al. 2022

Progress in Photovoltaics

Self Cite

View full text Add to dashboard Cite

The degradation of two amorphous silicon‐based photovoltaic (PV) modules, namely, of single junction amorphous silicon (a‐Si) and of micromorph tandem (a‐Si/ μ‐Si), after 11 years of exposure in the south of Spain is analyzed. Their I‐V curves were measured outdoors to study the changes of the electrical parameters in the course of three different periods: during the initial days of exposure, during the first year, and in the subsequent 10‐year period. The translation of the curves to an identical set of operating conditions, which enables a meaningful comparison, was done by the different correction procedures described in the standard IEC60891:2021, including the procedure 3, which does not require the knowledge of module parameters, whose values are typically not available. The annual power degradation rates over the entire 11‐year period are 1.12% for the a‐Si module, which is 3.02% for the first year, and 0.98% for the a‐Si/ normalμ‐Si, which is 2.29% for the initial year.

show abstract

Section: Alternative Correction Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of the degradation of amorphous silicon‐based modules after 11 years of exposure by means of IEC60891:2021 procedure 3

Piliougine

Sánchez-Friera

Petrone

et al. 2022

Progress in Photovoltaics

Self Cite

View full text Add to dashboard Cite

show abstract

“…PV modules also exhibit natural aging that reduces the annual PV energy production with a more or less flat degradation rate. For crystalline silicon PV modules, it was estimated a reduction of [0.8-0.9]% over the year [3]. An exhaustive review of degradation phenomena occurring in PV modules is reported in [4].…”

Section: Introductionmentioning

confidence: 99%

Early Detection of Photovoltaic Panel Degradation through Artificial Neural Network

2021

Self Cite

View full text Add to dashboard Cite

In this paper, an artificial neural network (ANN) is used for isolating faults and degradation phenomena occurring in photovoltaic (PV) panels. In the literature, it is well known that the values of the single diode model (SDM) associated to the PV source are strictly related to degradation phenomena and their variation is an indicator of panel degradation. On the other hand, the values of parameters that allow to identify the degraded conditions are not known a priori because they can be different from panel to panel and are strongly dependent on environmental conditions, PV technology and the manufacturing process. For these reasons, to correctly detect the presence of degradation, the effect of environmental conditions and fabrication processes must be properly filtered out. The approach proposed in this paper exploits the intrinsic capability of ANN to map in its architecture two effects: (1) the non-linear relations existing among the SDM parameters and the environmental conditions, and (2) the effect of the degradation phenomena on the I−V curves and, consequently, on the SDM parameters. The ANN architecture is composed of two stages that are trained separately: one for predicting the SDM parameters under the hypothesis of healthy operation and the other one for degraded condition. The variation of each parameter, calculated as the difference of the output of the two ANN stages, will give a direct identification of the type of degradation that is occurring on the PV panel. The method was initially tested by using the experimental I−V curves provided by the NREL database, where the degradation was introduced artificially, later tested by using some degraded experimental I−V curves.

show abstract

Performance evaluation of IEC 60891:2021 procedures for correcting I–V curves of photovoltaic modules under healthy and faulty conditions

Migan‐Dubois

Delpha

2022

Progress in Photovoltaics

View full text Add to dashboard Cite

Correction of PV modules' current-voltage characteristics (I-V curves) is essential before they can be used for performance analysis and fault diagnosis under real-life conditions. IEC 60891 (version 2021) has updated Procedure 2 and proposed a new correction Procedure 4 compared to the 2009 version. This study aims to analyze the performance of these new procedures applied to I-V curves of faulty PV modules. The work is based on an mc-Si PV module considering healthy and four common fault conditions with varying fault severity. The irradiance and temperature measured in the field are used to generate I-V curves. The correction procedures of IEC 60891 (version 2021) based on a single curve (Procedures 1, 2, and 4) are evaluated. Environmental factors such as measurement season and irradiation level on the correction performance are studied. The results show that Procedure 2 is relatively betterwith the relative root-mean-square error of the curve current as 2.6% compared to Procedure 1 (2.8%) and Procedure 4 (4.8%). Experimental tests using real I-V curves also show that Procedure 2 exhibits better robustness of correction. The new Procedure 4, whose correction coefficients are determined dynamically, performs poorly under partial shading and short-circuit bypass conditions. However, it achieves similar or better performance than Procedures 1 and 2 under degraded conditions, where the PV fault is generally not easy to detect, making the I-V correction more necessary. It is, therefore, a promising alternative correction procedure when it is difficult to determine the correction coefficients in advance. Finally, the pros and cons of the procedures are discussed with the suggestion of correction procedures under different conditions. The challenges and prospects are also provided.

show abstract

Analysis of the degradation of single‐crystalline silicon modules after 21 years of operation

Cited by 23 publications

References 35 publications

Analysis of the degradation of amorphous silicon‐based modules after 11 years of exposure by means of IEC60891:2021 procedure 3

Analysis of the degradation of amorphous silicon‐based modules after 11 years of exposure by means of IEC60891:2021 procedure 3

Early Detection of Photovoltaic Panel Degradation through Artificial Neural Network

Performance evaluation of IEC 60891:2021 procedures for correcting I–V curves of photovoltaic modules under healthy and faulty conditions

Contact Info

Product

Resources

About