Analysis of the Basic Characteristic by Electrical Model of Aluminum Nitride Thin Film Pressure Sensor

Ooishi, Yasunobu; Kishi, Kazushi; Akiyama, Morito; Noma, Hiroaki; Tabaru, Tatsuo

doi:10.2109/jcersj.113.816

Cited by 10 publications

(5 citation statements)

References 4 publications

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“…Figure 2͑b͒ shows the dependence of the electric charge on pressure. 35 On the other hand, the phase is constant over 4 Hz, and increases below 3 Hz. The piezoelectric response ͑the induced charge per unit force applied in the same direc-tion͒ of the sensor was 0.7 pC/ N. The reported piezoelectric coefficient d 33 of single crystal AlN thin films is 3-5 pC/N, [30][31][32][33] and the piezoelectric response of the sensor is comparatively low.…”

Section: Resultsmentioning

confidence: 99%

Flexible piezoelectric pressure sensors using oriented aluminum nitride thin films prepared on polyethylene terephthalate films

Akiyama

Morofuji

Kamohara

et al. 2006

Journal of Applied Physics

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Section: Resultsmentioning

confidence: 99%

Flexible piezoelectric pressure sensors using oriented aluminum nitride thin films prepared on polyethylene terephthalate films

Akiyama

Morofuji

Kamohara

et al. 2006

Journal of Applied Physics

Self Cite

137

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“…It is thought that the gain is decreased by the leak of the generated charges, because the electric resistance of the composite film is not infinite. [31] On the other hand, the phase is constant over 4 Hz, and increases below 3 Hz. The limit of our measurement equipment was 100 Hz, and we estimate that the AlN film can respond to frequencies higher than 100 Hz, because AlN is a hard material (hardness 27 GPa) [32,33] and has a high surface acoustic wave (SAW) velocity of 5910 m s -1 .…”

Section: Resultsmentioning

confidence: 99%

Preparation of Oriented Aluminum Nitride Thin Films on Polyimide Films and Piezoelectric Response with High Thermal Stability and Flexibility

Akiyama

Morofuji

Kamohara

et al. 2007

Adv Funct Materials

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Abstractc‐Axis oriented aluminum nitride (AlN) thin films are successfully prepared on amorphous polyimide films by radiofrequency magnetron reactive sputtering at room temperature. Structural analysis shows that the AlN films have a wurtzite structure and consist of c‐axis oriented columnar grains about 100 nm wide. The full width at half maximum of the X‐ray diffraction rocking curves and piezoelectric coefficient d33 of the AlN films are 8.3° and 0.56 pC N–1, respectively. The AlN films exhibit a piezoelectric response over a wide temperature range, from –196 to 300 °C, and can measure pressure within a wide range, from pulse waves of hundreds of pascals to 40 MPa. Moreover, the sensitivity of the AlN films increases with the number of times it was folded, suggesting that we can control the sensitivity of the AlN films by changing the geometric form. These results were achieved by a combination of preparing the oriented AlN thin films on polyimide films, and sandwiching the AlN and polymer films between top and bottom electrodes, such as Pt/AlN/polyimide/Pt. They are thin (less than 10 μm), self powered, adaptable to complex contours, and available in a variety of configurations. Although AlN is a piezoelectric ceramic, the AlN films are flexible and excellent in mechanical shock resistance.

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“…AlN has been studied in view of direct pressure sensing, both utilizing the voltage and charge (current) as sensor signal (Ooishi et al 2005;Akiyama et al 2006;Kishi et al 2006). Fig.…”

Section: Sensitivity For Direct Usementioning

confidence: 99%

Thin-film electro-acoustic sensors based on AlN and its alloys: possibilities and limitations

Wingqvist

2012

Microsyst Technol

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Sputter deposited aluminum nitride (AlN) thin films have played a central role for the successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device-the thin film bulk acoustic resonator, with its primary use for high frequency filter applications for the telecom industry. Recently, increased piezoelectric properties in AlN through the alloying with scandium nitride have been identified both experimentally and theoretically. This opens up new possibilities for the thin film electro-acoustic technology.Here expectations and discussions are presented on acoustic FBAR sensor performance when based on AlN as well as on such AlN alloys to identify possible benefits and limitations. Inhere, the distinction is made between direct and in-direct (acoustic) use of the piezoelectric effect for sensor applications. These two approaches are described and compared in view of their advantages and possibilities. Especially, the indirect (or acoustic) use is identified as interesting for its versatility and good exploitation of the thin film technology to obtain highly sensitive sensor transducers. It is pointed out that the indirect approach can well be obtained internally in the piezoelectric material structure. Original calculations are presented to support the discussion.

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Analysis of the Basic Characteristic by Electrical Model of Aluminum Nitride Thin Film Pressure Sensor

Cited by 10 publications

References 4 publications

Flexible piezoelectric pressure sensors using oriented aluminum nitride thin films prepared on polyethylene terephthalate films

Flexible piezoelectric pressure sensors using oriented aluminum nitride thin films prepared on polyethylene terephthalate films

Preparation of Oriented Aluminum Nitride Thin Films on Polyimide Films and Piezoelectric Response with High Thermal Stability and Flexibility

Thin-film electro-acoustic sensors based on AlN and its alloys: possibilities and limitations

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