Analysis of the aging mechanism occurring at the bond-wire contact of IGBT power devices during power cycling

Microstructural evolution during the crack propagation at the bond-wire contact area of IGBT power modules upon power cycling

“…Aging tests under the following conditions {Junction temperature rise (ΔT j ) = 110 • C, minimal junction temperature (T j,min ) = 55 • C, power-on duration (t on ) = 3 s, power-off duration (t off ) = 6 s} were applied on several half-bridge (mid leg) SKIM63 substrates, and removed from the test bench at different aging stages [5]. It was deduced that the crack propagation manner is reproducible on all the wires.…”

“…Thus, several microstructural features were analyzed in this paper and then related to the cracking manner. Accelerated power cycling tests were applied on SKIM63 IGBT samples manufactured by Semikron at different cycling stages [5,6]. Microstructural analyses have been performed using Electron backscattered diffraction (EBSD) technique.…”

New model of crack propagation of aluminium wire bonds in IGBT power modules under low temperature variations

“…IGBTs are important power semiconductor devices that are widely used in smart grid, household appliances, electric vehicles, and other applications [1]. Due to the mismatch of thermal expansion coefficients between packaging materials, an IGBT module can be subjected to thermal stresses, which eventually lead to the fatigue failure of the package [2].…”

A Fatigue Lifetime Prediction Model for Aluminum Bonding Wires

“…The influence of the organic or inorganic encapsulation on the reliability of the wire bridges, for example, is evaluated in [12,13], while [14][15][16] perform accelerated mechanical fatigue tests to investigate the influence of thermo-mechanical shear stress on wire lift-offs. The changes in the microstructure near the bonding interface and crack propagation due to power cycling are investigated by [17][18][19][20].…”