Analysis of Static Imprint Phenomenon in Ferroelectric VDF-TrFE Copolymer Film for Nonvolatile Memory Devices

In this paper, a 60 nm-thick ferroelectric film of poly(vinylidene fluoride-trifluoroethylene) on a flexible substrate of aluminum foil was fabricated and characterized. Compared to pristine silicon wafer, Al-foil has very large root-mean-square (RMS) roughness, thus presenting challenges for the fabrication of flat and uniform electronic devices on such a rough substrate. In particular, RMS roughness affects the leakage current of dielectrics, the uniformity of devices, and the switching time in ferroelectrics. To avoid these kinds of problems, a new thin film fabrication method adopting a detach-and-transfer technique has been developed. Here, 'detach' means that the ferroelectric film is detached from a flat substrate (sacrificial substrate), and 'transfer' refers to the process of the detached film being moved onto the rough substrate (main substrate). To characterize the dielectric property of the transferred film, polarization and voltage relationships were measured, and the results showed that a hysteresis loop could be obtained with low leakage current.

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“…As can be seen in Fig. 1(c), the XRD result shows that the peak is at 2θ = 19.8 • , which is consistent with our previous report [14].…”

Section: Single Layered Ferroelectric Film On Rigid Substratesupporting

confidence: 92%

Fabrication and Characterization of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) (P(VDF-TrFE)) Thin Film on Flexible Substrate by Detach-and-Transferring

Kim

Lee

2012

IEICE Trans. Electron.

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“…This effect has been experimentally evidenced in ferroelectric thin film capacitors with variable thickness. [45,46] Although the bulk screening model reasonably explains the imprinted hysteresis loops for films illuminated by UV light during poling, it cannot describe an enhancement of the polarization imprint under external bias, as observed by Grossmann et al [38]. The scenario proposed in the interface screening model has consistently and repeatedly been successful in describing, both qualitatively and quantitatively, a wide variety of experimental data on imprint behavior of ferroelectric thin film capacitors, including a logarithmic-type time dependence of imprint [47] and the effects of temperature, illumination and of an externally applied bias [36,38,42].…”

Section: B Bulk and Interface Screening Modelsmentioning

confidence: 99%

Biasing Effects in Ferroic Materials

Kovaľ¹,

Viola²,

Tan³

2015

Ferroelectric Materials - Synthesis and Characterization

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In this chapter we present an overview of some important concepts related to the processes and microstructural mechanisms that produce the deformation of hysteresis loops and the loss of their symmetry characteristics in ferroelectric, ferroelastic and ferromagnetic systems. The most discussed themes include: aging and fatigue as primary mechanisms of biased hysteresis loops in ferroelectric/ferroelastic materials, imprint phenomenon as an important biasing process in ferroelectric thin films, the development of an exchange bias field and of specific spin states, such as spin canting and spin-glass-like phases, as the main causes of biased hysteresis loops in different types of magnetic heterostructures. The present discussion leads to the identification of the main differences and possible analogies in the underlying mechanisms of possible biasing effects occurring in the different ferroic systems, which can benefit the theoretical description, modelling, and engineering of multifunctional devices based on ferroic systems experiencing the internal bias phenomena.

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“…Physical origin of imprint is still under debate, although the ferroelectric degradation of polarization properties associated to non-switching surface layers with a large residual field in the electrode-ferroelectric frontier has been identified as one responsible mechanism for the shifting in the hysteresis loop [3,4]. Imprint control can be achieved either by exposing the sample during long periods and high temperatures [5], by manipulating the thickness of pinned domains on the free lateral surfaces [6] or by injecting electronic charges into the electrode-ferroelectric interface via Schottky thermoionic current [7]. First procedure has been successfully implemented in experimental lead zirconate titanate (PZT) optical shutters with stable performance on its dielectric susceptibility response after a long range of commutation pulses ( 10 4 ∼ ) [8,9], outlining an alternate principle on light transmittance memory devices.…”

Section: Introductionmentioning

confidence: 99%

Electrical imprint effects on far infrared (FIR) transmittance spectrum in PZT ferroelectric films

2015

Optics Communications

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a b s t r a c tTunable transmittance response in the 0.1-25 THz range for a lead Zirconate Titanate Ferroelectric film under imprint effects and surface anisotropy is calculated by adapting the classical Landau Devonshire theory and Rouard's method. Induced electrical field is introduced by modulating the P E − polarization profile, while the dielectric permittivity frequency dependence enters into the formalism by taking into account the soft phonon mode E(TO1) contribution in the framework of the Drude-Lorentz model. It is found that two optical states of light transmittance emerge at zero applied field and normal incidence, and the intensities of transmitted light are closely correlated with the strength of imprint and the path of the electrical polarization.

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Analysis of Static Imprint Phenomenon in Ferroelectric VDF-TrFE Copolymer Film for Nonvolatile Memory Devices

Cited by 6 publications

References 1 publication

Fabrication and Characterization of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) (P(VDF-TrFE)) Thin Film on Flexible Substrate by Detach-and-Transferring

Fabrication and Characterization of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) (P(VDF-TrFE)) Thin Film on Flexible Substrate by Detach-and-Transferring

Biasing Effects in Ferroic Materials

Electrical imprint effects on far infrared (FIR) transmittance spectrum in PZT ferroelectric films

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