Analysis of Single and Coupled Rectangular Dielectric Waveguides

Crombach, Ulrich

doi:10.1109/tmtt.1981.1130467

Cited by 25 publications

(5 citation statements)

References 13 publications

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“…Das zur Berechnung verwendete Verfahren ist in [23,24] ausführlich dargestellt. Es wird im folgenden kurz beschrieben.…”

Section: Mathematische Methodeunclassified

Resonanzfrequenzen und Feldstärken in geschirmten dielektrischen Scheiben- und Ringresonatoren

Crombach¹,

Michelfeit²

1981

Frequenz

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Übersicht:Geschirmte dielektrische Scheiben-und Ringresonatoren werden mit der Orthogonalentwicklungsmethode untersucht. Für verschiedene Resonatoren werden die Ergebnisse der numerischen Rechnung für die niedrigsten Resonanztypen angegeben. Die Abweichung der berechneten Resonanzfrequenzen ist kleiner als 0,2% von berechneten und 0,8% von gemessenen Werten aus der Literatur. Für einen Scheibenresonator wird der Einfluß des Scheibenradius und der umgebenden Schirmung auf den Resonanztyp untersucht. Dazu werden die berechneten magnetischen Feldlinien und die im Resonator gespeicherte zeitgemittelte Energiedichte gezeigt. Es ergibt sich eine Einteilung in "innere" und "äußere" Resonanzen. Für die technisch interessante niedrigste "innere" Resonanz eines Scheibenresonatprs wird der Verlauf der Resonanzfrequenz über dem Abstand der oberen Schirmung angegeben. Es wird gezeigt, daß eine konzentrische Innenbohrung in der Resonatorscheibe die Resonanzfrequenz um weniger als 2 % erhöht, wenn der Bohrungsradius kleiner als ein Drittel des Scheibenradius ist.Abstract: Shielded dielectric ring-and disc resonators are investigated by means of the mode-matching technique. Numerical results are given for the lowest-order resonance modes of different resonators. The deviation of the calculated resonant frequencies from calculated and measured values given in literature is smaller than 0.2% or 0.8%, respectively. Influence of disc radius and shielding on the resonance mode of one disc resonator is investigated and figured by plots of the calculated lines ofmagnetic field and the stored energy. The resonances are classified as "inner" and "outer" resonance modes. Resonant frequency versus hight of the upper screen diagramms are given for the lowest-order "inner" mode of a disc resonator. It is pointed out that the resonant frequency increases less than 2 % if the radius of a concentric bore-hole in the disc is less than a third of the disc radius.Für die Dokumentation: Resonator / MIC-Oszillator / Filter / Orthogonalentwicklung

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“…Das zur Berechnung verwendete Verfahren ist in [23,24] ausführlich dargestellt. Es wird im folgenden kurz beschrieben.…”

Section: Mathematische Methodeunclassified

Resonanzfrequenzen und Feldstärken in geschirmten dielektrischen Scheiben- und Ringresonatoren

Crombach¹,

Michelfeit²

1981

Frequenz

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“…The modified structures can exhibit leakage [4] and dominant mode crossing (see [5,6] for example). Oliner has shown in [4] that insulated planar structures can leak and that the leakage can be avoided with proper design.…”

Section: Intrqductionmentioning

confidence: 99%

“…However, the frequency cannot be mcreased indefinitely. It is well known that the dominant mode switches types from TMY at low frequencies to TY at high frequencies [5,6]. The physical reason for this phenomena is that r2Y operation is induced at low frequencies by the presence of the two conductors.…”

Section: Conductor Loss Studymentioning

confidence: 99%

Effects of Insulating Dielectric Layers in Millimeter-Wave Planar Transmission Lines

Young

Itoh

1987

17th European Microwave Conference, 1987

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Insulating dielectric layers added to waveguiding structures to reduce the conductor losses at high frequencies complicate the structure and usually introduce dominant mode crossing and leakage. A qualitative study is used to derive a design constraint that ensures that insulated structures fully utilize the conductor loss reduction available from the insulating dielectric layers. A numerical example is provided in which it is shown that in certain cases arbitrary dielectrics cannot be used for insulating layers. INTRQDUCTIONIn an effort to reduce the conductor losses in millimeter-wave waveguides, insulating dielectric layers are being introduced to planar dielectric waveguides [1,2] and to microstrip-type waveguides [3]. The insulating layers consist of low dielectric constant materials and are placed between the higher dielectric constant guiding layer and structure metallization to induce decaying fields in the insulator. The reduced field strength at tie conductors induce smaller currents, and therefore, smaller conductor losses. A recent example of such a modificaton is the microslabTm waveguide, where insulating dielectric layers were added to the microstrip geometry [3] (see Fig. 1).The introduction of dielectric layers complicates the structure and makes the operating characteristics more complex. The modified structures can exhibit leakage [4] and dominant mode crossing (see [5,6] for example). Oliner has shown in [4] that insulated planar structures can leak and that the leakage can be avoided with proper design. Therefore, the design procedure for minimizing the conductor loss must also incorporate the requirements for a non-leaky structure. In this paper, we neglect dielectric loss and investigate the conductor loss and leakage in a qualitative manner in order to provide a general design criterion for planar insulated waveguides that fully utilizes the loss reduction available from the insulating layers.Planar waveguides can be approximately analysed using an "inside/outside" technique [4]. Referencing the general waveguide of Fig.2, the inside (outside) region has an effective dielectric constant 8effil (eeffo). The step in e,ff provides the lateral confinement. Confmemeni is maintained in the y-direction with either a dielectric discontinuity or metallization. CONDUCTOR LOSS STUDYTo determine in a qualitative manner the conductor loss and leakage properties of insulated strip waveguides, we will analyse the inside and outside regions seperately. For the planar waveguides being considered for millimeter-wave circuits and integrated optics, the inside/outside-regions are layered parallel-plate waveguides. It is sufficient to analyse the three-layer case shown in Fig.3. Waveguides with more than three layers behave similarly as long as one layer has a higher 8eff than the others..

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“…Οι γραμμές αυτές έχουν ένα αξιοποιήσιμο εύρος ζώνης που εκτείνεται από τα 40 GHz έως τα 140 GHz.Παρόλο που η αρχή οδήγησης κύματος στους κυματοδηγούς αυτούς είναι η ίδια με αυτήν των οπτικών διηλεκτρικών κυματοδηγών, η μορφολογία τους και ο τρόπος κατασκευής τους διαφέρει σημαντικά. Ενας οπτικός διηλεκτρικός κυματο δηγός αποτελείται από έναν πυρήνα, ο οποίος περιβάλλεται από ένα η περισσό τερα διηλεκτρικά στρώματα με ελαφρά μικρότερη σχετική διηλεκτρική σταθερά.γραμμή ειδώλου[25][26][27][28][29][30], η μονωμένη γραμμή ειδώλου [27],[31] και η παγιδευ μένη γραμμή ειδώλου[32][33][34].2.3.1 Γραμμή ειδώλου[25][26][27][28][29][30] Η γραμμή ειδώλου (σχ. 2.2α)[25],[26] είναι μία θεμελιώδης μορφή δι ηλεκτρικού κυματοδηγού, από την οποία αναπτύχθηκαν πολλές άλλες μορφές δι ηλεκτρικών κυματοδηγών που χρησιμοποιούνται στις χιλιοστομετρικές συχνότητες[27].…”

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“…Η γραμμή που προκύ πτει με τον τρόπο αυτό ονομάζεται "μονωμένη γραμμή ειδώλου" (σχ. 2.2β)[27].Το μεγαλύτερο τμήμα του πεδίου συγκεντρώνεται μέσα στην διηλεκτρική ταινία και μικρό τμήμα του στην περιοχή κοντά στο αγώγιμο επίπεδο[31]. Με τον τρό πο αυτό μειώνονται οι απώλειες αγωγιμότητας.…”

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Μελετη Της Γραμμης Μικροταινιας Αναρτημενου Υποστρωματος Με Τη Μεθοδο Της Φασματικης Αναλυσης

Πολυχρονακησ¹

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Analysis of Single and Coupled Rectangular Dielectric Waveguides

Cited by 25 publications

References 13 publications

Resonanzfrequenzen und Feldstärken in geschirmten dielektrischen Scheiben- und Ringresonatoren

Resonanzfrequenzen und Feldstärken in geschirmten dielektrischen Scheiben- und Ringresonatoren

Effects of Insulating Dielectric Layers in Millimeter-Wave Planar Transmission Lines

Μελετη Της Γραμμης Μικροταινιας Αναρτημενου Υποστρωματος Με Τη Μεθοδο Της Φασματικης Αναλυσης

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