Analysis of SET Propagation in a System in Package Point of Load Converter

Abstract

Power cycling of the Point-of-Load converter is observed during system level heavy ions tests. This event has low cross section and is observed for reduced supply voltage of device under test. Laser tests are used to reproduce this effect and show that it might be due to propagation of single event transients from the voltage reference to operational amplifier being part of the undervoltage protection circuit. Laser tests show that propagating transients are the ones with high enough positive peak and insignificant negative peak value whereas some transients with bigger maximum and/or peak to peak value do not propagate. SPICE simulation shows that in operational amplifier with low voltage difference between V+ and V-, there is difference in propagation of unipolar and bipolar transients from input to output of the amplifier. Analysis of the voltage controlled current source in the amplifier explains also difference in propagation of bipolar transients with negative peak followed by positive peak and with positive peak followed by negative peak.

Radiation effects and radiation hardening technology of new microsystems

“…. 目前, 国内外仅查到少量关于 SiP单粒子瞬态脉冲 [111] 、总剂量效应 [13,15,16] 、瞬时剂 量率效应 [112] 和电磁脉冲效应 [113] 的论文, 还未见更多 关于SiP辐射效应的论文.…”

CHARM High-Energy Ions for Microelectronics Reliability Assurance (CHIMERA)

“…In the EA, throughout two experimental runs in 2017 and 2018, during which Ultra-High Energy (UHE, >5 GeV/u) ions were used to perform radiation effects testing [3], [4], [13], [14], the following limitations were identified. First, only a single beam energy was available, resulting in the LET of ∼8 MeV/(mg/cm 2 ) Second, the machine was configured for very high intensities, not suited for single-event effect (SEE) testing.…”

Comparison of single event effect on cascoded low noise amplifier performance metrics for two different frequencies

“…In the literature, the SEE problem has been reported in many combinational circuits as well as sequential circuits [3][4][5][6][7]. The SET investigation has been discussed in analog and digital circuits such as operational amplifiers, SRAM, power converters, feedback amplifiers, and comparators [8][9][10][11][12]. In order to compete with other technological rivals like high-electron mobility transistors (HEMT), Si-Ge, Bi-CMOS, and III-IV technology, RF CMOS technology now has the capability to drive gigahertz-range applications thanks to a new scaling trend.…”