Analysis of
GaAs
compound semiconductors and the semiconductor laser diode using electron holography, Lorentz microscopy, electron diffraction microscopy and differential phase contrast
STEM
Abstract:In order to develop and manufacture semiconductor devices which are key components of the optical telecommunication products, such as the semiconductor laser diode, it is essential to confirm whether it is manufactured as designed. Electric potential distributions of the semiconductor devices are designed in nanoscale, so two dimensional methods to evaluate the electrical potential in the semiconductors with a high spatial resolution are necessary for product management. The observation of the gallium arsenide… Show more
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