Abstract:This work investigates the effect of the doping concentration of SiC power metal-oxide–semiconductor field-effect transistors (MOSFETs) under an unclamped inductive switching (UIS) condition. Switching circuits such as inverters and motor-drive circuits often face unexpected operating conditions; therefore, a UIS test is performed to assess the avalanche ruggedness of the device, and design parameters such as the doping concentration should be considered to improve the UIS characteristics. Technology computer-… Show more
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