2019 International Symposium on Electromagnetic Compatibility - EMC EUROPE 2019
DOI: 10.1109/emceurope.2019.8872083
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Analysis of RF Noise in LDO and Establishment of Noise Immunity

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Cited by 3 publications
(2 citation statements)
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“…In (6), W and L are width and length of MOS channel. The I 0 is a dc current when an aspect ratio W/L is equal to one and gate-source voltage V GS Mx is equal to zero volts.…”
Section: Integrated Otasmentioning
confidence: 99%
“…In (6), W and L are width and length of MOS channel. The I 0 is a dc current when an aspect ratio W/L is equal to one and gate-source voltage V GS Mx is equal to zero volts.…”
Section: Integrated Otasmentioning
confidence: 99%
“…Over the past years, researchers have focused on characterizing the effect of single-tone EMI on specific ICs and extracting their susceptibility profiles [12]- [16]. In addition, some authors' work aim to improve the application of EM susceptibility testing methods and predict IC immunity through analytical modelling and numerical simulation [17]- [20].…”
Section: Introductionmentioning
confidence: 99%