Analysis of reversion losses in charge pumps and its impact on efficiency for low power design

Eid, Majd; Rodriguez‐Villegas, Esther

doi:10.1109/newcas.2017.8010092

Cited by 5 publications

(4 citation statements)

References 5 publications

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“…Figure 3 is used to illustrate the influence of the leakage current, V B and V C are the voltages of drain and gate of MN3 and MP3, MN3 works in triode region from 0 to t1, and works in saturation region from t1 to t2, the duration of the transition is t0. The power consumption introduced by the overlapping of CLK1 and CLK2 is given in (2) [27]:…”

Section: Circuit Of Nvgmentioning

confidence: 99%

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A High Performance 0.18 μm RF Switch for Multi-Standard

Liang

Yebing²

2022

Electronics

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This paper proposes a stacked field-effect transistor (FET) single-pole, double-throw (SPDT) RF switch which is capable of multi-standard. Negative voltage generator (NVG), logic controller, level shifter, and RF Switch branches are integrated. A PMOS self-biased strategy is proposed to improve linearity and simplify the design of the logic controller and level shifter. In order to reduce the influence of NVG, a new charge pump (CP) is proposed, and a low pass filter (LPF) is added to stabilize bias voltages. A new layout of the switch FET is proposed to minimize the product of on-state resistance and off-state capacitance (time constant). The RF switch proposed in this paper was implemented in the 0.18 μm silicon on insulator (SOI) process. The measured results show the P1 dB of 40 dBm, and the isolation (ISO) and insert loss (IL) at 1 GHz/5 GHz of 37 dB/ 22 dB, and 0.36 dB/0.55 dB. The operating frequency range is DC-6 GHz. Supply current is 37uA with the supply voltage of 2.6V.

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Section: Circuit Of Nvgmentioning

confidence: 99%

“…In addition to the optimization of RF switches alone, there are some works that design RF switches together with other modules, such as ESD [23,24], antenna [13], impedance matching networks [12] and NVG [25][26][27]. The performance of RF switches in these works is not outstanding, but the whole module can achieve good performance.…”

Section: Introductionmentioning

confidence: 99%

A High Performance 0.18 μm RF Switch for Multi-Standard

Liang

Yebing²

2022

Electronics

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“…In a practical case, the actual CP output performance is further degraded as it suffers from various power losses during the pumping process. The common loss that is encountered in CP includes redistribution loss [12], conduction loss [32,33], reversion loss [34,35], short circuit loss [36] and switching loss [32]. For low voltage CP, reversion, conduction and switching losses are periodized to be eliminated or minimized as they are the main factors deteriorating the CP performance compared to other losses [37].…”

Section: Rcp Model / Architecture a Charge Pumpmentioning

confidence: 99%

Low Voltage Switched-Capacitive-Based Reconfigurable Charge Pumps for Energy Harvesting Systems: An Overview

Ramiah

Churchill

et al. 2022

IEEE Access

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Conventional SC-based charge pump with fixed conversion ratio is predominantly adopted in energy harvesting (EH) systems, which becomes a bottleneck for attaining high power conversion efficiency (PCE) with wide dynamic range (WDR). This article reviews and explores the SC-based reconfigurable charge pump (RCP) as an alternative voltage-boosting element for the EH system. An overview of the RCP structure is established, followed by a comprehensive review of CP reconfigurable topologies along with state-of-art architecture. Design consideration of the RCP in terms of dynamic range, PCE, and VCE is provided to give a clear insight into the future development of RCP architecture for the EH system.INDEX TERMS Energy harvesting (EH), reconfigurable charge pump, wide dynamic range, capacitivebased converter, dc-dc converter, CMOS

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“…As an antithetical to the aforementioned losses, reverse charge leakage are significant in advanced CMOS technology which is attributed to shorter device length. The reverse sharing phenomenon causes current to flow from the Nth,cp node to (N-1)th,cp by indecorous switching effects through Vth variation, lack of gate-to-source voltage(Vgs) drive, and short circuit dissipation [51][52][53].…”

Section: ) Reverse Charge Sharing and Leakagementioning

confidence: 99%

Low-Voltage Capacitive-Based Step-Up DC-DC Converters for RF Energy Harvesting System: A Review

et al. 2020

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Bulky off-chip inductors are predominantly adopted for inductive-based step-up DC-DC converter in RF energy harvesting (RFEH) systems, which impose a restriction in physical form factor for miniaturized device. This paper review and explores the capacitive-based step-up DC-DC converters (charge-pump) as voltage boosting element for low-voltage RFEH systems. An overview of RFEH is established and a comprehensive review of CMOS charge-pump is followed along with the complementary frequency generation circuit used as a clocking element. Key design considerations of charge-pump circuits are included here along with recommendations to circumvent its bottlenecks for future development in RFEH systems. INDEX TERMS-RF energy harvesting (RFEH), charge-pump, capacitive-based converters, DC-DC converter, CMOS.

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Analysis of reversion losses in charge pumps and its impact on efficiency for low power design

Cited by 5 publications

References 5 publications

A High Performance 0.18 μm RF Switch for Multi-Standard

A High Performance 0.18 μm RF Switch for Multi-Standard

Low Voltage Switched-Capacitive-Based Reconfigurable Charge Pumps for Energy Harvesting Systems: An Overview

Low-Voltage Capacitive-Based Step-Up DC-DC Converters for RF Energy Harvesting System: A Review

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