Analysis of reverse tunnelling current in GaInN light-emitting diodes

Cho, Jaehee; Mao, An; Kim, J.K.; Son, J. K.; Park, Yeonsang; Schubert, E. Fred

doi:10.1049/el.2010.3236

Cited by 11 publications

(6 citation statements)

References 9 publications

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“…Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes Qifeng Shan, 1 David S. Meyaard, 1 Qi Dai, 1,a) Jaehee Cho, 1 E. Fred Schubert,1,b) Joong Kon Son, 2 The reverse leakage current of a GaInN light-emitting diode (LED) is analyzed by temperature dependent current-voltage measurements. At low temperature, the leakage current is attributed to variable-range-hopping conduction.…”

mentioning

confidence: 99%

“…LEDs with low leakage current, including subthreshold forward leakage current and reverse leakage current, are desirable to increase the device lifetime and the electrostatic discharge resilience. 1,2 The reverse leakage current of GaN LEDs has been studied using temperature dependent current-voltage measurements. 3 It was claimed that the main conduction mechanism responsible for the reverse-bias leakage is tunneling.…”

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confidence: 99%

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Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

Shan

Meyaard

Dai

et al. 2011

Applied Physics Letters

132

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The reverse leakage current of a GaInN light-emitting diode (LED) is analyzed by temperature dependent current–voltage measurements. At low temperature, the leakage current is attributed to variable-range-hopping conduction. At high temperature, the leakage current is explained by a thermally assisted multi-step tunneling model. The thermal activation energies (95–162 meV), extracted from the Arrhenius plot in the high-temperature range, indicate a thermally activated tunneling process. Additional room temperature capacitance–voltage measurements are performed to obtain information on the depletion width and doping concentration of the LED.

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confidence: 99%

mentioning

confidence: 99%

Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

Shan

Meyaard

Dai

et al. 2011

Applied Physics Letters

132

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“…Since leakage current strongly depends on the density of defects, a gradual worsening of crystal quality is to be expected [5,6].…”

Section: Results Of the Accelerated Aging Experimentsmentioning

confidence: 99%

Long-term degradation mechanisms of mid-power LEDs for lighting applications

Buffolo

Santi

Meneghini

et al. 2015

Microelectronics Reliability

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“…This phenomenon could be mitigated by inserting a layer of less-doped n-GaN between the MQWs and the bottom n-GaN layer to modify the junction as has been done in LED technology. 17 Correspondingly, the blocking capability of the VMOSFET would be enhanced as well.…”

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confidence: 99%

Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure

Lü

Liu

Jiang

et al. 2016

Applied Physics Letters

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In this letter, monolithic integration of InGaN/GaN light emitting diodes (LEDs) with vertical metal-oxide-semiconductor field effect transistor (VMOSFET) drivers have been proposed and demonstrated. The VMOSFET was achieved by simply regrowing a p-and n-GaN bilayer on top of a standard LED structure. After fabrication, the VMOSFET is connected with the LED through the conductive n-GaN layer, with no need of extra metal interconnections. The junction-based VMOSFET is inherently an enhancement-mode (E-mode) device with a threshold voltage of 1.6 V. By controlling the gate bias of the VMOSFET, the light intensity emitted from the integrated VMOSFET-LED device could be well modulated, which shows great potential for various applications, including solid-state lighting, micro-displays, and visible light communications.

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Analysis of reverse tunnelling current in GaInN light-emitting diodes

Cited by 11 publications

References 9 publications

Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

Long-term degradation mechanisms of mid-power LEDs for lighting applications

Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure

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