Analysis of resist pattern collapse and optimization of DUV process for patterning sub-0.20-μm gate line

Yu, Jeong Yun; Jeong, Goomin; Huh, Hoon; Kim, Jae-Jeong; Kim, SangPyo; Jeong, Jae-Keun; Kim, Hong-Seok

doi:10.1117/12.312455

Cited by 3 publications

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“…It is well known that a multilayer antireflectant system is effective in patterning critical layers at hyper NA to control complex reflectivity due to various incident angles [1][2][3] . A multilayer bottom antireflectant consisting of an organic antireflectant and an inorganic antireflectant such as TiN and/or SiON are typical for critical layers.…”

Section: Introductionmentioning

confidence: 99%

Immersion BARC for hyper NA applications

Huang

Chuang

Yeh

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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Reflectivity control through angle is challenging at hyper NA, especially for Logic devices which have various pitches in the same layer. When patterning critical layers, a multilayer antireflectant system is required in order to control complex reflectivity resulting from various incident angles. Multilayer antireflectants typically consist of an organic and inorganic (TiN and SiON) layers. Fewer or thinner layers are desired for etch pattern transfer. However, it would make the reflectivity control through angle more difficult. We have investigated several antireflectants for a simplified multilayer stack. The organic films differ in terms of n, k, thickness and etch rate. The n, k, and thickness span the ranges of 1.60-1.85, 0.15-0.30, and 30-130nm, respectively. The overall patterning performance including profiles, line width roughness (LWR), overlap depth of focus margin (ODOF) and critical dimension uniformity (CDU) has been evaluated. An immersion tool at 1.35NA was used to perform lithography. Simulation was performed using Prolith TM software.

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Section: Introductionmentioning

confidence: 99%

Immersion BARC for hyper NA applications

Huang

Chuang

Yeh

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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Collapse behavior of microresist pattern analyzed by the tip indentation method with an atomic force microscope

Kawai

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Collapse Behavior of KrF Resist Line Pattern Analyzed with Atomic Force Microscope Tip

Kawai¹

2000

Jpn. J. Appl. Phys.

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A quantitative analysis of the adhesion property of a KrF line resist pattern of 170 nm width is carried out experimentally. By directly applying load to the top corner of the resist pattern with a microcantilever tip, a resist line pattern adhering on a substrate can be collapsed easily and is accompanied by residue formation. The dependency of line pattern collapse on load position along with line direction is investigated. At the load position 3 µm away from the pattern edge, the average load required for the pattern collapse is about 15 times larger than that of the load position at the pattern edge. Based on this result, one can confidently state that the pattern edge is more likely to collapse. In combination with the analysis of the internal stress distribution of the resist pattern, the load position dependency of the pattern collapse and the destruction mechanisms of the resist-substrate interface can be clarified. It is also clear that the crack formed at the pattern bottom affects the stress concentration and the residue shape.

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Analysis of resist pattern collapse and optimization of DUV process for patterning sub-0.20-μm gate line

Cited by 3 publications

References 0 publications

Immersion BARC for hyper NA applications

Immersion BARC for hyper NA applications

Collapse behavior of microresist pattern analyzed by the tip indentation method with an atomic force microscope

Collapse Behavior of KrF Resist Line Pattern Analyzed with Atomic Force Microscope Tip

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