2019
DOI: 10.1007/s00339-019-2998-6
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Analysis of Pr co-doped Al:ZnO thin films using feasible nebulizer spray technique for optoelectronic technology

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Cited by 12 publications
(7 citation statements)
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“…For example, how the film deposition and growing conditions affect the residual stress and C i j coefficients [5,7,12,13,61]. Furthermore, the DFT+U may be ap-plied to more complex ZnO systems to predict optical and elastic properties when defects, impurities, and interfaces are present [3,4,6,14,22,26].…”
Section: Discussionmentioning
confidence: 99%
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“…For example, how the film deposition and growing conditions affect the residual stress and C i j coefficients [5,7,12,13,61]. Furthermore, the DFT+U may be ap-plied to more complex ZnO systems to predict optical and elastic properties when defects, impurities, and interfaces are present [3,4,6,14,22,26].…”
Section: Discussionmentioning
confidence: 99%
“…Zinc oxide (ZnO) is an important semiconductor with broad applications in technological devices such as solar cells, optical filters, and gas sensors, among many others [1][2][3]. Processed as thin films and coatings, ZnO is widely studied for applications in optoelectronics [4][5][6][7]. To enhance material performance in such applications, the study of its elastic and optical properties is of paramount importance.…”
Section: Introductionmentioning
confidence: 99%
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“…In particular, doping with rare earth elements found to enhance the electrical and optical properties of ZnO, which can be beneficial as a TCO [ 4 ]. In this regard, praseodymium (Pr) co-doped AZO thin film was prepared by the nebulized spray technique [ 11 ]. Again, the Al doping content was fixed at 3 wt%, while different doping concentrations of Pr were adopted.…”
Section: Aluminum and Co-doped Znomentioning
confidence: 99%
“…Furthermore, in order to achieve optimal functional properties, ZnO was doped with many different elements, such as In, Ga, Al, Li, La, Mg, Sm, Pr, etc. [ 3 , 4 , 11 , 12 ]. Among them, Al- doped ZnO (AZO) exhibits the lowest resistivity (2 × 10 −4 Ω cm), which makes it as a leading candidate to replace ITO [ 13 ], and a number of reports can be found in which doped ZnO was used for optoelectronic applications [ 10 , 14 , 15 , 16 , 17 , 18 , 19 ].…”
Section: Introductionmentioning
confidence: 99%