“…Furthermore, in order to achieve optimal functional properties, ZnO was doped with many different elements, such as In, Ga, Al, Li, La, Mg, Sm, Pr, etc. [ 3 , 4 , 11 , 12 ]. Among them, Al- doped ZnO (AZO) exhibits the lowest resistivity (2 × 10 −4 Ω cm), which makes it as a leading candidate to replace ITO [ 13 ], and a number of reports can be found in which doped ZnO was used for optoelectronic applications [ 10 , 14 , 15 , 16 , 17 , 18 , 19 ].…”