Analysis of nonlinear distortion and its reduction using feedback injection schemes in an <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll" id="d1e269" altimg="si6.gif"><mml:mn>1</mml:mn><mml:mo>.</mml:mo><mml:mn>3</mml:mn><mml:mi mathvariant="normal">μ</mml:mi><mml:mi mathvariant="normal">m</mml:mi></mml:math> transistor laser

Vinodhini, S.V.; Piramasubramanian, S.; Madhan, M. Ganesh

doi:10.1016/j.optcom.2019.01.065

Cited by 10 publications

(6 citation statements)

References 16 publications

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“…The TL device meets out the urging need of high-speed transmission systems in applications such as high performance computers and data centres by opening up the possibility of TL based all-optical logic processor and on-chip optical interconnects [14,15]. Moreover, TL is a better alternative to laser diode as it provides a larger modulation depth [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

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Influence of Franz Keldysh Effect on the Modulation depth and Distortion Characteristics of Transistor Laser

Ramya,

Piramasubramanian,

Madhan

2023

Preprint

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Numerical analysis of a Transistor Laser is carried out to investigate the influence of Franz-Keldysh Effect on the non-linear distortion characteristics such as intermodulation (IM). The device considered for the study incorporates a GaAs absorber layer in the collector–base junction of a TL emitting around 980 nm. The base current threshold is obtained as 39 mA for the collector to base voltage of 1 V and it is discerned that the threshold current of TL is dependent on electric field in addition to the bias current. The analytical solution of rate equations at steady state is derived and compared with the numerical simulation and the same is plotted for VCB = 1 V. Moreover, maximum optical light output loss of 12 mW and 1.37 mA additional current is contributed to the collector current for collector base voltage of 3 V under various base currents due to F-K effect. The modulation bandwidth (f− 3dB) of TL under voltage modulation is obtained as 9.63 GHz while, under current modulation, it is found as 8.38 GHz respectively. A maximum modulation depth of 86% is obtained for IB=1.06Ith, at 2.4 GHz. The frequency components related to intermodulation product, IMD3 (2.15 GHz) magnitudes are obtained as − 10.26dBc, − 12.37 dBc, − 13.54 dBc and − 15.92 dBc for VCB voltage value of 0V, 1V, 2V and 3V respectively. The intermodulation product, IMD5 (2.05 GHz)magnitudes are obtained as − 18.89 dBc,−25.76 dBc, − 28.22 dBc and − 36.05 dBc for the collector bias voltage (VCB) value of 0V, 1V, 2V and 3V respectively.

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Section: Introductionmentioning

confidence: 99%

“…One of the key concerns is nonlinearity in optical sources [18].Optical sources ought to have higher depth of modulation and minimal non-linear distortion characteristics especially for the analog based applications. In the reference [16,17] the distortion features of TL are quantitatively analysed.…”

Section: Introductionmentioning

confidence: 99%

Influence of Franz Keldysh Effect on the Modulation depth and Distortion Characteristics of Transistor Laser

Ramya,

Piramasubramanian,

Madhan

2023

Preprint

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“…20 The device was fabricated in NPN and PNP configurations with six quantum wells and demonstrated at room temperature by Shirao et al 17 Harmonic analysis of TL with different number of quantum wells in the base region achieving lower distortion under common base configuration is reported 21,22 and further the distortion reduction mechanisms are also discussed. 23 In this work, gain lever and bistable effects are analyzed in TL under common emitter configuration, for the first time. The active region in the base of the TL is split into two sections to exhibit gain lever effect.…”

Section: Introductionmentioning

confidence: 99%

“…Harmonic analysis of an output of a TL with mixed signal as an input is analyzed by Feng et al 15 Large signal analysis has been carried out for 1300 nm TL and its performance has been compared with laser diode 20 . The device was fabricated in NPN and PNP configurations with six quantum wells and demonstrated at room temperature by Shirao et al 17 Harmonic analysis of TL with different number of quantum wells in the base region achieving lower distortion under common base configuration is reported 21,22 and further the distortion reduction mechanisms are also discussed 23 …”

Section: Introductionmentioning

confidence: 99%

Numerical simulation and analysis of dual base transistor laser

Ramakrishnan¹,

Piramasubramanian

Muthu

2022

Micro & Optical Tech Letters

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In this work, characteristics of dual base transistor laser are numerically analyzed for the first time. Active base region of the transistor laser is split into two unequal regions composing of shorter and longer sections, which are biased separately. Static characteristics of transistor laser are evaluated using a rate equation model, which reveals switching action in output optical power for a longer section base current of 9.2 mA with unpumped shorter section. Hysteresis behavior in the optical output is observed for the longer section input current till 1.6 mA. Optical bistable characteristics are studied for various values of gain (longer) and absorber (shorter) section currents. Further slope efficiency is evaluated using P‐I characteristics, before the onset of bistability, for gain lever features under common emitter (CE) configuration. A maximum gain lever of 4.5 dB is observed with the longer section bias current of 1.3 mA.

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“…The demand for the resonance-free optical response combined with the high data rate transmission is met out by TL which provides the choice of both voltage and current modulation 4 . The harmonic and distortion analysis of the Transistor Laser based on the position of quantum well in the base region were investigated in detail [5][6][7][8] .…”

Section: Introductionmentioning

confidence: 99%

Effect of Collector Voltage on the Large and Small Signal Modulation Characteristics of 980 nm Transistor Laser

et al. 2020

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Theoretical analysis of Transistor Laser is carried out and the static and frequency responses for different collector voltages, under common emitter configuration are determined. The threshold current (Ith) is observed as 33mA and it increases linearly with reverse collector to base voltage (VCB). Meanwhile, the output optical power is found to decrease proportionately when VCB is increased. A maximum of 18.7GHz modulation bandwidth is observed when an input base current of 95 mA is applied at a fixed value of VCB (1V). The modulation bandwidth is found to decrease with increase in reverse VCB. The turn on delay increases with collector voltage. However, it decreases with increase in base current.

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Analysis of nonlinear distortion and its reduction using feedback injection schemes in an 1.3μm transistor laser

Cited by 10 publications

References 16 publications

Influence of Franz Keldysh Effect on the Modulation depth and Distortion Characteristics of Transistor Laser

Influence of Franz Keldysh Effect on the Modulation depth and Distortion Characteristics of Transistor Laser

Numerical simulation and analysis of dual base transistor laser

Effect of Collector Voltage on the Large and Small Signal Modulation Characteristics of 980 nm Transistor Laser

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