Analysis of multi-domain ferroelectric switching in BiFeO3 thin film using phase-field method

Cao, Guoping; Cao, Ye; Huang, Houbing; Chen, Lei; Ma, Xingqiao

doi:10.1016/j.commatsci.2015.11.021

Cited by 20 publications

(13 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In all three cases, it was observed that domains switch to electric-field-favorable orientations mainly through a 71 degree switching path and that 180 degree switching is barely observed due to the relatively high energy bias, as also reported in our previous work [14]. Figure 2a presents the typical time evolutions of the switching percentage for three paths in the 32 nm BFO film.…”

Section: Resultssupporting

confidence: 80%

“…According to the Landau-Ginzburg-Devonshire theory, total free energy density for a ferroelectric single crystal is given by [14,32,33] (1) in which F Landau , F grad , F elas , F elec represent Landau energy, gradient energy, elastic energy, and electrostatic energy, respectively. Landau energy is expanded as a 4th order polynomial of the polarization components P i (i = 1, 2, 3):…”

Section: The Phase-field Modelmentioning

confidence: 99%

“…All of the above properties involve the dynamics of ferroelectric polarization as well as reactions to externally applied fields. Electric-field-induced polarization switching in ferroelectric materials has attracted extensive attention from experimental [10] and theoretical [11][12][13][14] perspectives, owing to their unique features which can potentially provide improvements in data storage [15,16], spintronics [17], tunnel junctions [18], and non-volatile magnetoelectric devices [19]. As less voltage would be needed to generate the same electric field in thin films than that in thick ones, the basic understanding of underlying physics for thickness effects in switching behaviors is of great importance to the applications of ferroelectric thin films in miniaturized devices.…”

Section: Introductionmentioning

confidence: 99%

“…In our previous work [14], we studied the process of electric-field-induced polarization switching with a phase-field model, and the results show that 71 degree switching is the primary switching path when BFO films are subjected to electric fields. To fundamentally understand the effect of film thickness on polarization switching in BFO thin films, we employed a phase field model to simulate the switching behavior in films with various thicknesses.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Thickness Dependence of Switching Behavior in Ferroelectric BiFeO3 Thin Films: A Phase-Field Simulation

Cao

Huang

2017

Applied Sciences

Self Cite

View full text Add to dashboard Cite

A phase-field approach to the analysis of the thickness effects in electric-field-induced domain switching in BiFeO 3 thin films has been formulated. Time evolutions of domain switching percentage for films with different thicknesses were explored to reveal the primary switching path and its dependence on film thickness. In addition, hysteresis loop for these films were calculated to obtain their coercive fields. Results show a nonlinear thickness dependence of coercive field for ultrathin films. A parametric study of the interactions between film thickness, coercive field, current-voltage (I-V) response, and polarization switching behavior is herein discussed, which could provide physical insights into materials engineering.

show abstract

Section: Resultssupporting

confidence: 80%

Section: The Phase-field Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Thickness Dependence of Switching Behavior in Ferroelectric BiFeO3 Thin Films: A Phase-Field Simulation

Cao

Huang

2017

Applied Sciences

Self Cite

View full text Add to dashboard Cite

show abstract

“…Therefore, ferroelectric (180 ) or ferroelastic (71 and 109 ) domain switching processes are allowed in the system. 28,29 180 domains can be reversed without strains involved while the switching of non-180 domains requires significantly larger strain. 30 Consequently, the switching of 180 domains is much faster than the switching of non-180 domains so that the non-180 domain switching will be more sensitive to the frequency of the applied field due to its relatively longer relaxation time.…”

mentioning

confidence: 99%

Frequency dependence of the coercive field of 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystal from 0.01 Hz to 5 MHz

Chen

Zhang

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

The frequency dependence of the coercive field E c in [001] c poled 0.71Pb(Mg 1/3 Nb 2/3 )O 3 -0.29PbTiO 3 single crystals was investigated as a function of frequency f from 0.01 Hz to 5 MHz. E c was found to be proportional to f b as predicted by the Ishibashi and Orihara model, but our results showed two frequency regimes separated at around 1.0 MHz with different b values. This change of switching kinetics may be due to the presence of slower relaxation times for non-180 domain switching and heterogeneous nucleation of polar nanoregions, whose contribution to polarization reversal is frozen out beyond 1.0 MHz, leading to a larger b. Published by AIP Publishing.[http://dx.doi.org/10.1063/1.4983712]The coercive field (E c ) of ferroelectric materials is a critical parameter for the application of ferroelectric materials in random access memories (FRAMs) and medical ultrasonic transducers, which determines the lowest or maximum operating voltage of related devices. [1][2][3] In general, E c is frequency dependent because polarization switching is associated with domain wall motions and/or opposite domain nucleation and growth, both processes are time and field dependent. 1,2,4 The frequency dependence of the coercive field of bulk ferroelectric single crystals or ceramics had been investigated by measuring the polarization hysteresis loops in the low frequency range of 0.01 Hz-1000 Hz. [5][6][7] There are two factors limiting the measurement frequency for the hysteresis loop. The first is the existence of a finite relaxation time for the domain switching process. If the electric field changes too fast, the domain switching process cannot be completed, which leads to partial polarization reversal and the hysteresis loop becomes distorted. The second is the heat generation during the hysteresis measurement at high frequencies, which will cause the change of polarization and the coercive field. 8 On the other hand, many practical devices, such as medical ultrasonic transducers, usually operate in the megahertz range. For example, the center frequencies of abdominal, obstetric, and cardiac imaging transducers are from 2 to 5 MHz. Therefore, it is very critical to investigate the frequency dependent E c in the higher frequency range,

show abstract

Multiferroic Simulations

Fang

Tong

Duan

2019

Integrated Multiferroic Heterostructures and Applications

View full text Add to dashboard Cite

Analysis of multi-domain ferroelectric switching in BiFeO3 thin film using phase-field method

Cited by 20 publications

References 28 publications

Thickness Dependence of Switching Behavior in Ferroelectric BiFeO3 Thin Films: A Phase-Field Simulation

Thickness Dependence of Switching Behavior in Ferroelectric BiFeO3 Thin Films: A Phase-Field Simulation

Frequency dependence of the coercive field of 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystal from 0.01 Hz to 5 MHz

Multiferroic Simulations

Contact Info

Product

Resources

About