Analysis of morphology of porous silicon layers using Flicker noise spectroscopy

Abstract

In this work we analyze the surface roughness of porous silicon films and show that it is possible to quantify some fine differences in the morphology of different samples and even in different points of the surface of one sample using a novel method of Flicker Noise Spectroscopy (FNS). High informative potential of the method is now illustrated by applying it to the analysis of laterally non-uniform porous silicon films produced by the local anodization of silicon using a point cathode placed in the vicinity of the silicon wafer. The possibilities for future explorations are shown.

Concentration-dependent self-diffusion of adsorbates in mesoporous materials

“…In the present paper, we report our experimental data on self-diffusion properties of organic liquids in porous silicon (PSi) samples with different pore sizes [13]. A special preparation procedure of PSi results in a honeycomb-like structure with nonintersecting pores of a certain diameter perpendicular to the Si substrate [14,15].…”

Review of Flicker Noise Spectroscopy in Electrochemistry

“…In the latter case, when the dynamic variable (magnitude of surface roughness, space distribution in concentrations of chemical substances, codon variations in a genome, etc.) varies chaotically along the configuration coordinate x [29][30][31], one needs to make the following substitutions: t → x and f → f x ≡ k/2π, where the dimension of "space frequency" f x and wave number k is [x] -1 .…”

“…Informativeness of signal irregularities at every level of the spatiotemporal hierarchy of the evolution under study became the basic hypothesis of Flicker-Noise Spectroscopy (FNS) [23][24][25][26][27][28][29][30][31][32][33][34][35][36], a general phenomenological framework for extracting the information stored in various complex signals. This framework allows one to develop algorithms that can be used to determine as many information parameters about the system state based on the analysis of its complex signals as is needed to solve the problems under study.…”

Morphology of Nanostructured Semiconductors Studied Using Atomic Force Microscopy Combined with Stochastic Signal Spectroscopy

“…The difference in values of OX n and OY n means that the growth of the pore is more correlated in the direction of their propagation then the growth of adjacent pores. First attempt of using this approach was done while analyzing the surface of porous silicon samples with a lateral non-homogeneity of porosity [3]. First attempt of using this approach was done while analyzing the surface of porous silicon samples with a lateral non-homogeneity of porosity [3].…”