Analysis of MODFET microwave characteristics

Roblin, Patrick; Kang, S.C.; Ketterson, A.; Morkoç̌, H.

doi:10.1109/t-ed.1987.23176

Cited by 41 publications

(2 citation statements)

References 11 publications

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“…where the R ij -and I ij -parameters determine the Y-parameters, and are derived from the linear MODFET wave equation in [8]. It accounts both for the distributed nature of R i , and the change in sheet electron concentration along the channel.…”

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confidence: 99%

Interfacial gate resistance in Schottky-barrier-gate field-effect transistors

Rohdin

Moll

et al. 1998

IEEE Trans. Electron Devices

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gate resistance, MODFET, MESFET, skin effectWe discuss in depth a previously overlooked component in the gate resistance Rg of SchottkyBarrier-Gate FETs, in particular 0.1-µm gate-length AlInAs/GaInAs MODFETs. The high-frequency noise and power gain of these FETs depends critically on Rg. This has been the motivation for the development of T-gates which keep the gate finger metallization resistance Rga (proportional to the gate width Wg) low, even for very short gate length Lg. Rga increases with frequency due to the skin effect, but our 3D numerical modeling shows conclusively that this effect is negligible. We show that the always "larger-thanexpected" Rg, is instead caused by a component Rgi which scales inversely with Wg. We interpret Rgi as a metal-semiconductor interfacial gate resistance. The dominance of Rgi profoundly affects device optimization and model scaling. For GaAs and InP based SBGFETs there appears to exist a smallest practically achievable normalized interfacial gate resistance rgi on the order of 10 -7 Ωcm 2 . AbstractWe discuss in depth a previously overlooked component in the gate resistance R g of Schottky-Barrier-Gate FETs, in particular 0.1-µm gate-length AlInAs/GaInAs MODFETs.The high-frequency noise and power gain of these FETs depends critically on R g . This has been the motivation for the development of T-gates which keep the gate finger metallization resistance R ga (proportional to the gate width W g ) low, even for very short gate length L g . R ga increases with frequency due to the skin effect, but our 3D numerical modeling shows conclusively that this effect is negligible. We show that the always "larger-thanexpected" R g , is instead caused by a component R gi which scales inversely with W g . We interpret R gi as a metal-semiconductor interfacial gate resistance. The dominance of R gi profoundly affects device optimization and model scaling. For GaAs and InP based SBGFETs there appears to exist a smallest practically achievable normalized interfacial gate resistance r gi on the order of 10 -7 Ωcm2 .

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mentioning

confidence: 99%

Interfacial gate resistance in Schottky-barrier-gate field-effect transistors

Rohdin

Moll

et al. 1998

IEEE Trans. Electron Devices

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“…Several high-frequency analyses of HEMT devices under darkened conditions have been reported in recent years 17-91. Roblin et al [7] have solved the transmission line equation representing the intrinsic part of the HEMT to obtain Y-parameters. Equivalent circuit representations thus far reported have negative drain-tosource capacitances, which results in limited use of this microwave model.…”

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confidence: 99%

SPICE-compatible microwave model of an optically controlled high electron mobility transistor

Chakrabarti

Mishra

Madheswaran

1996

Int. J. Microw. Mill.-Wave Comput.-Aided Eng.

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Physical models for heterostructure FET simulation

Lugli

Neviani

Saraniti

1990

Trans Emerging Tel Tech

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Field effect transistors (FET) based on heterostructures between III‐V binary and ternary compounds have been demonstrated as outstanding semiconductor devices for microwave applications. This paper will present a critical discussion of the physical models that are used to study the prototype of heterostructure devices, that is the High Electron Mobility Transistor (HEMT). The main technological features involved in the fabrication of HEMT are outlined and their incorporation into theoretical models discussed.

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Analysis of MODFET microwave characteristics

Cited by 41 publications

References 11 publications

Interfacial gate resistance in Schottky-barrier-gate field-effect transistors

Interfacial gate resistance in Schottky-barrier-gate field-effect transistors

SPICE-compatible microwave model of an optically controlled high electron mobility transistor

Physical models for heterostructure FET simulation

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