Analysis of Mo Sidewall Ohmic Contacts to InGaAs Fins

Abstract

As transistor size is scaled down, the performance is degraded and many problems, so called shortchannel effects, arise. To address this problem, a vertical transistor structure such as vertical nanowire is suggested. In a vertical nanowire field-effect-transistor, the Ohmic contact at the top of the nanowire not only covers the top surface, but also wraps around the sidewall. Because the sidewall is considered to be different from the top surface, it is necessary to study the sidewall Ohmic contact properties such as the contact resistivity.First of all, I would like to thank my thesis advisor, Professor Jesus A. del Alamo, for allowing me to join his group and conducting exciting researches. I am grateful not only for his invaluable advice and guidance in this research, but also for encouraging me when I felt stuck. I could feel his passion and profession for research from the multiple discussions we had. Also, I learned a lot from his meticulous and detailed care for my research and presentations.I also want to thank Dr. Alon Vardi, who suggested and guided me to dive into this research topic. I learned lots of measurement skills and intuition from him. Also, having a lot of discussions with him was very helpful for me to explore this topic. I also want to express my gratitude to Xin Zhao, who suggested my original research topic about nanowire contact resistance and taught me many fabrication skills. I can't thank enough Dr. Alon Vardi and Xin Zhao for their patience to my questions, which were tremendous amount. I appreciate Wenjie Lu for his help and advice. Especially, his welcoming manner and advice at the beginning of my graduate student life in this group encouraged me a lot and helped me adjust in new environment. I thank Professor Zongyou Yin for his kindness and being my good office mate. Other past or current members of this group including