2021
DOI: 10.1109/ted.2021.3101993
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Analysis of Mo Sidewall Ohmic Contacts to InGaAs Fins

Abstract: As transistor size is scaled down, the performance is degraded and many problems, so called shortchannel effects, arise. To address this problem, a vertical transistor structure such as vertical nanowire is suggested. In a vertical nanowire field-effect-transistor, the Ohmic contact at the top of the nanowire not only covers the top surface, but also wraps around the sidewall. Because the sidewall is considered to be different from the top surface, it is necessary to study the sidewall Ohmic contact properties… Show more

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